| Growth of well-oriented AlxIn1-xN films by sputtering at low temperature | |
| Dong, C. J.1; Xu, M.1,2; Chen, Q. Y.1; Liu, F. S.3; Zhou, H. P.1; Wei, Y.1; Ji, H. X.1 | |
| Corresponding Author | Xu, M.(hsuming_2001@yahoo.com.cn) |
| 2009-06-24 | |
| Source Publication | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| ISSN | 0925-8388 |
| Volume | 479Issue:1-2Pages:812-815 |
| Abstract | AlxIn1-xN films with an AlN buffer were deposited on different substrates (including Si(1 1 1), sapphire, and glass) by radio-frequency (RF) magnetron sputtering at a low temperature of 300 degrees C. The morphology and structure analysis revealed that the AlxIn1-xN films grown on Si(1 1 1) and sapphire are of high orientation and good crystallinity with a bandgap energy (E-g) of less than 2.41 eV. The sheet resistance of AlxIn1-xN film grown on Si(1 1 1) and sapphire is approximately 40 Omega/square. These results are highly relevant to the development of effective nitride photovoltaic materials. (C) 2009 Elsevier B.V. All rights reserved. |
| Keyword | AlxIn1-xN film Magnetron sputtering Crystallinity Resistance |
| Funding Organization | Foundation of Science and Technology Bureau of Sichuan Province, PR China |
| DOI | 10.1016/j.jallcom.2009.01.075 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Foundation of Science and Technology Bureau of Sichuan Province, PR China[2006J13-052] |
| WOS Research Area | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS Subject | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| WOS ID | WOS:000267063300173 |
| Publisher | ELSEVIER SCIENCE SA |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/97603 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Xu, M. |
| Affiliation | 1.Sichuan Normal Univ, Inst Solid State Phys, Lab Low Dimens Struct Phys, Chengdu 610068, Peoples R China 2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China 3.Panzhihua Univ, Res Ctr V Ti Mat, Panzhihua 617000, Peoples R China |
| Recommended Citation GB/T 7714 | Dong, C. J.,Xu, M.,Chen, Q. Y.,et al. Growth of well-oriented AlxIn1-xN films by sputtering at low temperature[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2009,479(1-2):812-815. |
| APA | Dong, C. J..,Xu, M..,Chen, Q. Y..,Liu, F. S..,Zhou, H. P..,...&Ji, H. X..(2009).Growth of well-oriented AlxIn1-xN films by sputtering at low temperature.JOURNAL OF ALLOYS AND COMPOUNDS,479(1-2),812-815. |
| MLA | Dong, C. J.,et al."Growth of well-oriented AlxIn1-xN films by sputtering at low temperature".JOURNAL OF ALLOYS AND COMPOUNDS 479.1-2(2009):812-815. |
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