Growth of well-oriented AlxIn1-xN films by sputtering at low temperature

doi:10.1016/j.jallcom.2009.01.075

IMR OpenIR

	Growth of well-oriented AlxIn1-xN films by sputtering at low temperature
	Dong, C. J.1; Xu, M.1,2; Chen, Q. Y.1; Liu, F. S.3; Zhou, H. P.1; Wei, Y.1; Ji, H. X.1
通讯作者	Xu, M.(hsuming_2001@yahoo.com.cn)
	2009-06-24
发表期刊	JOURNAL OF ALLOYS AND COMPOUNDS
ISSN	0925-8388
卷号	479 期号:1-2 页码:812-815
摘要	AlxIn1-xN films with an AlN buffer were deposited on different substrates (including Si(1 1 1), sapphire, and glass) by radio-frequency (RF) magnetron sputtering at a low temperature of 300 degrees C. The morphology and structure analysis revealed that the AlxIn1-xN films grown on Si(1 1 1) and sapphire are of high orientation and good crystallinity with a bandgap energy (E-g) of less than 2.41 eV. The sheet resistance of AlxIn1-xN film grown on Si(1 1 1) and sapphire is approximately 40 Omega/square. These results are highly relevant to the development of effective nitride photovoltaic materials. (C) 2009 Elsevier B.V. All rights reserved.
关键词	AlxIn1-xN film Magnetron sputtering Crystallinity Resistance
资助者	Foundation of Science and Technology Bureau of Sichuan Province, PR China
DOI	10.1016/j.jallcom.2009.01.075
收录类别	SCI
语种	英语
资助项目	Foundation of Science and Technology Bureau of Sichuan Province, PR China[2006J13-052]
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000267063300173
出版者	ELSEVIER SCIENCE SA
引用统计	被引频次：37[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/97603
专题	中国科学院金属研究所
通讯作者	Xu, M.
作者单位	1.Sichuan Normal Univ, Inst Solid State Phys, Lab Low Dimens Struct Phys, Chengdu 610068, Peoples R China 2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China 3.Panzhihua Univ, Res Ctr V Ti Mat, Panzhihua 617000, Peoples R China
推荐引用方式 GB/T 7714	Dong, C. J.,Xu, M.,Chen, Q. Y.,et al. Growth of well-oriented AlxIn1-xN films by sputtering at low temperature[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2009,479(1-2):812-815.
APA	Dong, C. J..,Xu, M..,Chen, Q. Y..,Liu, F. S..,Zhou, H. P..,...&Ji, H. X..(2009).Growth of well-oriented AlxIn1-xN films by sputtering at low temperature.JOURNAL OF ALLOYS AND COMPOUNDS,479(1-2),812-815.
MLA	Dong, C. J.,et al."Growth of well-oriented AlxIn1-xN films by sputtering at low temperature".JOURNAL OF ALLOYS AND COMPOUNDS 479.1-2(2009):812-815.