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Lateral photovoltage of B-doped ZnO thin films induced by 10.6 mu m CO2 laser
Zhao, Songqing1; Liu, Wenwei1; Yang, Limin1; Zhao, Kun1,2; Liu, Hao1; Zhou, Na1; Wang, Aijun1; Zhou, Yueliang3; Zhou, Qingli4; Shi, Yulei4
Corresponding AuthorZhao, Songqing(zhaosongqing@yahoo.com.cn)
2009-09-21
Source PublicationJOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN0022-3727
Volume42Issue:18Pages:4
AbstractB-doped ZnO thin films were observed to have a lateral laser-induced photovoltaic effect: the saturation value varied very linearly with the 10.6 mu m constant laser spot position between the electrodes on the ZnO surface. It was found that the temperature gradient in the direction of electron transfer (along the film surface) due to the laser spot causes this photovoltage signal to be linearly dependent on the position of the laser spot in this isotropic system. This linearity is expected to make ZnO a candidate for position-sensitive photodetectors.
Funding OrganizationNational Natural Science Foundation of China ; Beijing Natural Science Foundation ; programme for New Century Excellent Talents in University (NCET) ; Research Fund for the Doctoral Program of Higher Education
DOI10.1088/0022-3727/42/18/185101
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[60877038] ; National Natural Science Foundation of China[50672132] ; National Natural Science Foundation of China[60778034] ; National Natural Science Foundation of China[10804077] ; Beijing Natural Science Foundation[4082026] ; programme for New Century Excellent Talents in University (NCET) ; Research Fund for the Doctoral Program of Higher Education
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000269557000022
PublisherIOP PUBLISHING LTD
Citation statistics
Cited Times:7[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/98180
Collection中国科学院金属研究所
Corresponding AuthorZhao, Songqing
Affiliation1.China Univ Petr, Dept Math & Phys, Beijing 102249, Peoples R China
2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
3.Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
4.Capital Normal Univ, Dept Phys, Key Lab Terahertz Optoelect, Beijing Key Lab Terahertz Spect & Imaging,Minist, Beijing 100048, Peoples R China
Recommended Citation
GB/T 7714
Zhao, Songqing,Liu, Wenwei,Yang, Limin,et al. Lateral photovoltage of B-doped ZnO thin films induced by 10.6 mu m CO2 laser[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2009,42(18):4.
APA Zhao, Songqing.,Liu, Wenwei.,Yang, Limin.,Zhao, Kun.,Liu, Hao.,...&Shi, Yulei.(2009).Lateral photovoltage of B-doped ZnO thin films induced by 10.6 mu m CO2 laser.JOURNAL OF PHYSICS D-APPLIED PHYSICS,42(18),4.
MLA Zhao, Songqing,et al."Lateral photovoltage of B-doped ZnO thin films induced by 10.6 mu m CO2 laser".JOURNAL OF PHYSICS D-APPLIED PHYSICS 42.18(2009):4.
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