Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer

doi:10.1016/j.spmi.2008.11.028

IMR OpenIR

	Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer
	Zhang, M. L.1; Wang, X. L.1,2; Xiao, H. L.1; Wang, C. M.1; Yang, C. B.1; Tang, J.1; Feng, C.1; Jiang, L. J.1; Hu, G. X.1; Ran, J. X.1; Wang, ZH. G.2
通讯作者	Zhang, M. L.(mlzhang@semi.ac.cn)
	2009-02-01
发表期刊	SUPERLATTICES AND MICROSTRUCTURES
ISSN	0749-6036
卷号	45 期号:2 页码:54-59
摘要	AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices (SLs) as barrier layer is grown on C-plane sapphire by metal organic vapor deposition (MOCVD). Compared with the conventional Si-doped structure, electrical property is improved. An average sheet resistance of 287.1 Omega/square and high resistance uniformity of 0.82% are obtained across the 2-inch epilayer wafer with an equivalent Al composition of 38%. Hall measurement shows that the mobility of two-dimensional electron gas (2DEG) is 1852 cm(2)/V s with a sheet carrier density of 1.2 x 10(13) cm(-2) at room temperature. The root mean square roughness (RMS) value is 0.159 nm with 5 x 5 mu m(2) scan area and the monolayer steps are clearly observed. The reason for the property improvement is discussed. (c) 2008 Elsevier Ltd. All rights reserved.
关键词	AlGaN/GaN heterostructure Superlattices (SLs) Root mean square roughness (RMS) Sheet resistance
DOI	10.1016/j.spmi.2008.11.028
收录类别	SCI
语种	英语
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
WOS记录号	WOS:000263616500002
出版者	ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/99457
专题	中国科学院金属研究所
通讯作者	Zhang, M. L.
作者单位	1.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhang, M. L.,Wang, X. L.,Xiao, H. L.,et al. Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer[J]. SUPERLATTICES AND MICROSTRUCTURES,2009,45(2):54-59.
APA	Zhang, M. L..,Wang, X. L..,Xiao, H. L..,Wang, C. M..,Yang, C. B..,...&Wang, ZH. G..(2009).Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer.SUPERLATTICES AND MICROSTRUCTURES,45(2),54-59.
MLA	Zhang, M. L.,et al."Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer".SUPERLATTICES AND MICROSTRUCTURES 45.2(2009):54-59.