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Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
Li, Hui1; Wang, Zhu1; Zhou, Kai1; Pang, Jingbiao1; Ke, Junyu1; Zhao, Youwen2
Corresponding AuthorWang, Zhu(wangz@whu.edu.cn)
2009-08-01
Source PublicationJOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
ISSN1454-4164
Volume11Issue:8Pages:1122-1126
AbstractUndoped GaSb was irradiated by 2.6 MeV protons. The irradiation-induced defects were studied by positron lifetime spectroscopy (PLS) and photoluminescence (PL). Positron lifetime measurements showed that vacancy-type defects were introduced after irradiation, and divacancies were formed at higher irradiation dose. Annealing experiments revealed there were different annealing steps between the as grown and proton-irradiated samples, the reason for which was tentatively attributed to the formation of divacancies in the proton-irradiated samples during annealing. All the vacancy defects could be annealed out at around 500 degrees C. The PL intensity quickly fell down after proton irradiation and decreased with increasing irradiation dose, indicating that irradiation induced non-irradiative recombination centers, whose candidates were assigned to the vacancy defects induced by proton irradiation.
KeywordGaSb Proton irradiation Defects Positron lifetime Photoluminescence
Funding OrganizationNatural Science Foundation of China
Indexed BySCI
Language英语
Funding ProjectNatural Science Foundation of China[10775107]
WOS Research AreaMaterials Science ; Optics ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Optics ; Physics, Applied
WOS IDWOS:000269724200013
PublisherNATL INST OPTOELECTRONICS
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/99508
Collection中国科学院金属研究所
Corresponding AuthorWang, Zhu
Affiliation1.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Li, Hui,Wang, Zhu,Zhou, Kai,et al. Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence[J]. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,2009,11(8):1122-1126.
APA Li, Hui,Wang, Zhu,Zhou, Kai,Pang, Jingbiao,Ke, Junyu,&Zhao, Youwen.(2009).Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence.JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,11(8),1122-1126.
MLA Li, Hui,et al."Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence".JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 11.8(2009):1122-1126.
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