Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence

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	Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
	Li, Hui 1; Wang, Zhu 1; Zhou, Kai 1; Pang, Jingbiao 1; Ke, Junyu 1; Zhao, Youwen 2
通讯作者	Wang, Zhu(wangz@whu.edu.cn)
	2009-08-01
发表期刊	JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
ISSN	1454-4164
卷号	11 期号:8 页码:1122-1126
摘要	Undoped GaSb was irradiated by 2.6 MeV protons. The irradiation-induced defects were studied by positron lifetime spectroscopy (PLS) and photoluminescence (PL). Positron lifetime measurements showed that vacancy-type defects were introduced after irradiation, and divacancies were formed at higher irradiation dose. Annealing experiments revealed there were different annealing steps between the as grown and proton-irradiated samples, the reason for which was tentatively attributed to the formation of divacancies in the proton-irradiated samples during annealing. All the vacancy defects could be annealed out at around 500 degrees C. The PL intensity quickly fell down after proton irradiation and decreased with increasing irradiation dose, indicating that irradiation induced non-irradiative recombination centers, whose candidates were assigned to the vacancy defects induced by proton irradiation.
关键词	GaSb Proton irradiation Defects Positron lifetime Photoluminescence
资助者	Natural Science Foundation of China
收录类别	SCI
语种	英语
资助项目	Natural Science Foundation of China[10775107]
WOS研究方向	Materials Science ; Optics ; Physics
WOS类目	Materials Science, Multidisciplinary ; Optics ; Physics, Applied
WOS记录号	WOS:000269724200013
出版者	NATL INST OPTOELECTRONICS
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/99508
专题	中国科学院金属研究所
通讯作者	Wang, Zhu
作者单位	1.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Li, Hui,Wang, Zhu,Zhou, Kai,et al. Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence[J]. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,2009,11(8):1122-1126.
APA	Li, Hui,Wang, Zhu,Zhou, Kai,Pang, Jingbiao,Ke, Junyu,&Zhao, Youwen.(2009).Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence.JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,11(8),1122-1126.
MLA	Li, Hui,et al."Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence".JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 11.8(2009):1122-1126.