| Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence | |
| Li, Hui1; Wang, Zhu1; Zhou, Kai1; Pang, Jingbiao1; Ke, Junyu1; Zhao, Youwen2 | |
| Corresponding Author | Wang, Zhu(wangz@whu.edu.cn) |
| 2009-08-01 | |
| Source Publication | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
 |
| ISSN | 1454-4164 |
| Volume | 11Issue:8Pages:1122-1126 |
| Abstract | Undoped GaSb was irradiated by 2.6 MeV protons. The irradiation-induced defects were studied by positron lifetime spectroscopy (PLS) and photoluminescence (PL). Positron lifetime measurements showed that vacancy-type defects were introduced after irradiation, and divacancies were formed at higher irradiation dose. Annealing experiments revealed there were different annealing steps between the as grown and proton-irradiated samples, the reason for which was tentatively attributed to the formation of divacancies in the proton-irradiated samples during annealing. All the vacancy defects could be annealed out at around 500 degrees C. The PL intensity quickly fell down after proton irradiation and decreased with increasing irradiation dose, indicating that irradiation induced non-irradiative recombination centers, whose candidates were assigned to the vacancy defects induced by proton irradiation. |
| Keyword | GaSb Proton irradiation Defects Positron lifetime Photoluminescence |
| Funding Organization | Natural Science Foundation of China |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Natural Science Foundation of China[10775107] |
| WOS Research Area | Materials Science ; Optics ; Physics |
| WOS Subject | Materials Science, Multidisciplinary ; Optics ; Physics, Applied |
| WOS ID | WOS:000269724200013 |
| Publisher | NATL INST OPTOELECTRONICS |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/99508 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Wang, Zhu |
| Affiliation | 1.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Li, Hui,Wang, Zhu,Zhou, Kai,et al. Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence[J]. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,2009,11(8):1122-1126. |
| APA | Li, Hui,Wang, Zhu,Zhou, Kai,Pang, Jingbiao,Ke, Junyu,&Zhao, Youwen.(2009).Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence.JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,11(8),1122-1126. |
| MLA | Li, Hui,et al."Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence".JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 11.8(2009):1122-1126. |
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