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Schottky Barrier Control of Self-Polarization for a Colossal Ferroelectric Resistive Switching 期刊论文
ACS NANO, 2023, 卷号: 17, 期号: 13, 页码: 12347-12357
作者:  Huang, Biaohong;  Zhao, Xuefeng;  Li, Xiaoqi;  Li, Lingli;  Xie, Zhongshuai;  Wang, Di;  Feng, Dingshuai;  Jiang, Yuxuan;  Liu, Jingyan;  Li, Yizhuo;  Yuan, Guoliang;  Han, Zheng;  Paudel, Tula R.;  Xing, Guozhong;  Hu, Weijin;  Zhang, Zhidong
收藏  |  浏览/下载：11/0  |  提交时间：2024/01/08
self-polarization  Schottky barrier  oxygenvacancy  BiFeO3  ferroelectric diode  
The effects of Eu3+ doping on the epitaxial growth and photovoltaic properties of BiFeO3 thin films 期刊论文
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2022, 卷号: 106, 页码: 49-55
作者:  Feng, Dingshuai;  Huang, Biaohong;  Li, Lingli;  Li, Xiaoqi;  Gu, Youdi;  Hu, Weijin;  Zhang, Zhidong
收藏  |  浏览/下载：97/0  |  提交时间：2022/07/01
Ferroelectric  Photovoltaic effect  BiFeO3  Eu3+ doping  Band gap  
Coupled Current Jumps and Domain Wall Creeps in a Defect-Engineered Ferroelectric Resistive Memory 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2021, 页码: 10
作者:  Huang, Biaohong;  Xie, Zhongshuai;  Feng, Dingshuai;  Li, Lingli;  Li, Xiaoqi;  Paudel, Tula R.;  Han, Zheng;  Hu, Weijin;  Yuan, Guoliang;  Wu, Tom;  Zhang, Zhidong
收藏  |  浏览/下载：109/0  |  提交时间：2022/07/01
BiFeO3  current jump  domain wall creep  ferroelectric resistive switching  oxygen vacancy  space-charge-limited current