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Photoluminescence study of Ge nanocrystals irradiated by reactor neutron flux 期刊论文
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 2007, 2007, 卷号: 264, 264, 期号: 2, 页码: 272-276, 272-276
作者:  S. B. Dun;  T. C. Lu;  Q. Hu;  Y. W. Hu;  C. F. You;  S. B. Zhang;  B. Tang;  J. L. Dai;  N. K. Huang
收藏  |  浏览/下载：146/0  |  提交时间：2012/04/13
Ge Nanocrystals  Ge Nanocrystals  Neutron Transmutation Doping  Neutron Transmutation Doping  Photoluminescence  Photoluminescence  Raman  Raman  Scattering  Scattering  Doped Si Nanocrystals  Doped Si Nanocrystals  Electron-spin-resonance  Electron-spin-resonance  Semiconductor  Semiconductor  Nanocrystals  Nanocrystals  N-type  N-type  Implanted Sio2-films  Implanted Sio2-films  Silicon Nanocrystals  Silicon Nanocrystals  Porous  Porous  Silicon  Silicon  Raman  Raman  Luminescence  Luminescence  Temperature  Temperature