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Single adatom site exchange during the Ge growth on group V element covered Si(001) 期刊论文
Scripta Materialia, 2007, 卷号: 56, 期号: 2, 页码: 113-116
作者:  E. Z. Liu;  C. Y. Wang
收藏  |  浏览/下载:134/0  |  提交时间:2012/04/13
Surface Segregation  Surfactant  Semiconductor  Kinetics  First  Principle Electron Theory  Mediated Epitaxial-growth  Dimer-exchange  Surfactants  Diffusion  Energy  
Adsorption, diffusion, and site exchange for Ge ad-dimers on Sb-covered Si(001) from first-principles total-energy calculations 期刊论文
Physical Review B, 2006, 卷号: 74, 期号: 7
作者:  E. Z. Liu;  C. Y. Wang;  J. T. Wang
收藏  |  浏览/下载:116/0  |  提交时间:2012/04/13
Mediated Epitaxial-growth  Surfactants