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Controlled growth of two-dimensional InAs single crystals via van der Waals epitaxy 期刊论文
NANO RESEARCH, 2022, 页码: 6
Authors:  Dai, Jiuxiang;  Yang, Teng;  Jin, Zhitong;  Zhong, Yunlei;  Hu, Xianyu;  Zou, Jingyi;  Xu, Weigao;  Li, Tao;  Lin, Yuxuan;  Zhang, Xu;  Zhou, Lin
Favorite  |  View/Download:49/0  |  Submit date:2022/07/14
two-dimensional materials  van der Waals epitaxy  indium arsenide  nonlayered material  
Energetics of the growth mode transition in InAs/GaAs(001) small quantum dot formation: A first-principles study 期刊论文
Surface Science, 2006, 卷号: 600, 期号: 10, 页码: 2007-2010
Authors:  E. Z. Liu;  C. Y. Wang
Favorite  |  View/Download:56/0  |  Submit date:2012/04/13
Density-functional Calculations  Gallium Arsenide  Indium Arsenide  Growth Mode Transition  Surface Thermodynamics  Augmented-wave Method  Ab-initio  Ge