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2005 [2]
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Source Publication：Applied Physics a-Materials Science & Processing
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Pulsed laser deposition of aluminate YAlO3 and LaAlO3 thin films for alternative gate dielectric applications
期刊论文
Applied Physics a-Materials Science & Processing, 2005, 卷号: 80, 期号: 8, 页码: 1775-1779
Authors:
J. M. Liu
;
G. H. Shi
;
L. C. Yu
;
T. L. Li
;
Z. G. Liu
;
J. Y. Dai
Favorite
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View/Download：154/0
|
Submit date：2012/04/14
Hafnium Oxide
Si
Stability
Silicon
Transition
Dioxide
Devices
Hfo2
Pulsed laser deposition of aluminate YAlO3 and LaAlO3 thin films for alternative gate dielectric applications
期刊论文
Applied Physics a-Materials Science & Processing, 2005, 卷号: 80, 期号: 8, 页码: 1775-1779
Authors:
J. M. Liu
;
G. H. Shi
;
L. C. Yu
;
T. L. Li
;
Z. G. Liu
;
J. Y. Dai
Favorite
|
View/Download：178/0
|
Submit date：2012/05/17
Hafnium Oxide
Si
Stability
Silicon
Transition
Dioxide
Devices
Hfo2
