IMR OpenIR
Effects of Bi segregation on the tensile properties of Cu/Cu3Sn(100) interface
Pang, X. Y.; Liu, Z. Q.; Wang, S. Q.; Shang, J. K.
Corresponding AuthorLiu, Z. Q.(zqliu@imr.ac.cn)
2011-12-01
Source PublicationMICROELECTRONICS RELIABILITY
ISSN0026-2714
Volume51Issue:12Pages:2330-2335
AbstractThe relaxed-type tensile processes of the clean and Bi segregated Cu/Cu3Sn(1 0 0) interfaces were investigated by the ab initio calculations based on the density functional theory. Fracture occurs at the Cu/Cu3Sn interface which has the lowest adhesion energy and tensile strength compared to the Cu/Cu and Cu3Sn/Cu3Sn interlayers. The theoretical tensile strength of the clean interface is 8.04 GPa, while that of 10% Bi segregated interface drops to 4.72 GPa. According to the atomic and electronic analyzes during tensile test, failure originates from the break of interfacial bonding and the extension of charge depletion region through the interface, when the supercell stretching exceeds the critical tensile strain of 12% for clean interface and 9.5% for Bi segregated interface. Large Bi atom not only introduces interfacial distortion but also reduces the hybridization of surrounding Cu and Sn atoms, which cause the weakening of interfacial mechanical strength of SnBi solder joints. (C) 2011 Elsevier Ltd. All rights reserved.
Funding OrganizationChinese Academy of Sciences ; National Basic Research Program of China ; Major National Science and Technology Program of China
DOI10.1016/j.microrel.2011.04.012
Indexed BySCI
Language英语
Funding ProjectChinese Academy of Sciences ; National Basic Research Program of China[2010CB631006] ; Major National Science and Technology Program of China[2011ZX02602]
WOS Research AreaEngineering ; Science & Technology - Other Topics ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied
WOS IDWOS:000298721500048
PublisherPERGAMON-ELSEVIER SCIENCE LTD
Citation statistics
Cited Times:7[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/106815
Collection中国科学院金属研究所
Corresponding AuthorLiu, Z. Q.
AffiliationChinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Pang, X. Y.,Liu, Z. Q.,Wang, S. Q.,et al. Effects of Bi segregation on the tensile properties of Cu/Cu3Sn(100) interface[J]. MICROELECTRONICS RELIABILITY,2011,51(12):2330-2335.
APA Pang, X. Y.,Liu, Z. Q.,Wang, S. Q.,&Shang, J. K..(2011).Effects of Bi segregation on the tensile properties of Cu/Cu3Sn(100) interface.MICROELECTRONICS RELIABILITY,51(12),2330-2335.
MLA Pang, X. Y.,et al."Effects of Bi segregation on the tensile properties of Cu/Cu3Sn(100) interface".MICROELECTRONICS RELIABILITY 51.12(2011):2330-2335.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Pang, X. Y.]'s Articles
[Liu, Z. Q.]'s Articles
[Wang, S. Q.]'s Articles
Baidu academic
Similar articles in Baidu academic
[Pang, X. Y.]'s Articles
[Liu, Z. Q.]'s Articles
[Wang, S. Q.]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Pang, X. Y.]'s Articles
[Liu, Z. Q.]'s Articles
[Wang, S. Q.]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.