Effects of Bi segregation on the tensile properties of Cu/Cu3Sn(100) interface

doi:10.1016/j.microrel.2011.04.012

IMR OpenIR

	Effects of Bi segregation on the tensile properties of Cu/Cu3Sn(100) interface
	Pang, X. Y.; Liu, Z. Q.; Wang, S. Q.; Shang, J. K.
通讯作者	Liu, Z. Q.(zqliu@imr.ac.cn)
	2011-12-01
发表期刊	MICROELECTRONICS RELIABILITY
ISSN	0026-2714
卷号	51 期号:12 页码:2330-2335
摘要	The relaxed-type tensile processes of the clean and Bi segregated Cu/Cu3Sn(1 0 0) interfaces were investigated by the ab initio calculations based on the density functional theory. Fracture occurs at the Cu/Cu3Sn interface which has the lowest adhesion energy and tensile strength compared to the Cu/Cu and Cu3Sn/Cu3Sn interlayers. The theoretical tensile strength of the clean interface is 8.04 GPa, while that of 10% Bi segregated interface drops to 4.72 GPa. According to the atomic and electronic analyzes during tensile test, failure originates from the break of interfacial bonding and the extension of charge depletion region through the interface, when the supercell stretching exceeds the critical tensile strain of 12% for clean interface and 9.5% for Bi segregated interface. Large Bi atom not only introduces interfacial distortion but also reduces the hybridization of surrounding Cu and Sn atoms, which cause the weakening of interfacial mechanical strength of SnBi solder joints. (C) 2011 Elsevier Ltd. All rights reserved.
资助者	Chinese Academy of Sciences ; National Basic Research Program of China ; Major National Science and Technology Program of China
DOI	10.1016/j.microrel.2011.04.012
收录类别	SCI
语种	英语
资助项目	Chinese Academy of Sciences ; National Basic Research Program of China[2010CB631006] ; Major National Science and Technology Program of China[2011ZX02602]
WOS研究方向	Engineering ; Science & Technology - Other Topics ; Physics
WOS类目	Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied
WOS记录号	WOS:000298721500048
出版者	PERGAMON-ELSEVIER SCIENCE LTD
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/106815
专题	中国科学院金属研究所
通讯作者	Liu, Z. Q.
作者单位	Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Pang, X. Y.,Liu, Z. Q.,Wang, S. Q.,et al. Effects of Bi segregation on the tensile properties of Cu/Cu3Sn(100) interface[J]. MICROELECTRONICS RELIABILITY,2011,51(12):2330-2335.
APA	Pang, X. Y.,Liu, Z. Q.,Wang, S. Q.,&Shang, J. K..(2011).Effects of Bi segregation on the tensile properties of Cu/Cu3Sn(100) interface.MICROELECTRONICS RELIABILITY,51(12),2330-2335.
MLA	Pang, X. Y.,et al."Effects of Bi segregation on the tensile properties of Cu/Cu3Sn(100) interface".MICROELECTRONICS RELIABILITY 51.12(2011):2330-2335.