Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates

doi:10.1007/s10854-010-0254-0

IMR OpenIR

	Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
	Wei, Meng 1; Wang, Xiaoliang 1,2; Pan, Xu 1; Xiao, Hongling 1,2; Wang, Cuimei 1,2; Yang, Cuibai 1,2; Wang, Zhanguo 2
通讯作者	Wei, Meng(mengw@semi.ac.cn)
	2011-08-01
发表期刊	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN	0957-4522
卷号	22 期号:8 页码:1028-1032
摘要	Crack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer between GaN epilayer and high temperature AlN buffer on 2-in Si(111) substrates by metal organic chemical vapor deposition. This paper investigated the influence of AlGaN buffer thickness on the structural properties of the GaN epilayer. It was confirmed from the optical microscopy and scanning electronic microscopy that the graded AlGaN buffer with optimized thickness had a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and atomic force microscopy analysis showed that AlGaN buffer with proper thickness could improve the crystal quality and surface morphology of the GaN film. Transmission electron microscopy analysis revealed that a significant reduction in threading dislocations was achieved in GaN epilayer by the insertion of graded AlGaN buffer.
资助者	Knowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences
DOI	10.1007/s10854-010-0254-0
收录类别	SCI
语种	英语
资助项目	Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB32 7503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS 2009L02]
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000292555200021
出版者	SPRINGER
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/107124
专题	中国科学院金属研究所
通讯作者	Wei, Meng
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Wei, Meng,Wang, Xiaoliang,Pan, Xu,et al. Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2011,22(8):1028-1032.
APA	Wei, Meng.,Wang, Xiaoliang.,Pan, Xu.,Xiao, Hongling.,Wang, Cuimei.,...&Wang, Zhanguo.(2011).Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,22(8),1028-1032.
MLA	Wei, Meng,et al."Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 22.8(2011):1028-1032.