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Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
Wei, Meng1; Wang, Xiaoliang1,2; Pan, Xu1; Xiao, Hongling1,2; Wang, Cuimei1,2; Yang, Cuibai1,2; Wang, Zhanguo2
Corresponding AuthorWei, Meng(mengw@semi.ac.cn)
2011-08-01
Source PublicationJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN0957-4522
Volume22Issue:8Pages:1028-1032
AbstractCrack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer between GaN epilayer and high temperature AlN buffer on 2-in Si(111) substrates by metal organic chemical vapor deposition. This paper investigated the influence of AlGaN buffer thickness on the structural properties of the GaN epilayer. It was confirmed from the optical microscopy and scanning electronic microscopy that the graded AlGaN buffer with optimized thickness had a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and atomic force microscopy analysis showed that AlGaN buffer with proper thickness could improve the crystal quality and surface morphology of the GaN film. Transmission electron microscopy analysis revealed that a significant reduction in threading dislocations was achieved in GaN epilayer by the insertion of graded AlGaN buffer.
Funding OrganizationKnowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences
DOI10.1007/s10854-010-0254-0
Indexed BySCI
Language英语
Funding ProjectKnowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB32 7503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS 2009L02]
WOS Research AreaEngineering ; Materials Science ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000292555200021
PublisherSPRINGER
Citation statistics
Cited Times:7[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/107128
Collection中国科学院金属研究所
Corresponding AuthorWei, Meng
Affiliation1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Wei, Meng,Wang, Xiaoliang,Pan, Xu,et al. Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2011,22(8):1028-1032.
APA Wei, Meng.,Wang, Xiaoliang.,Pan, Xu.,Xiao, Hongling.,Wang, Cuimei.,...&Wang, Zhanguo.(2011).Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,22(8),1028-1032.
MLA Wei, Meng,et al."Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 22.8(2011):1028-1032.
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