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Fe-diffusion-induced defects in InP annealed in iron phosphide ambient
Zhao, YW; Dong, HW; Jiao, JH; Zhao, JQ; Lin, LY
Corresponding AuthorZhao, YW()
2002-04-01
Source PublicationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
ISSN0021-4922
Volume41Issue:4APages:1929-1931
AbstractPhotoluminescence (PL) and photo induced current transient spectroscopy (PICTS) have been used to study deep levels in semi-insulating (SI) InP prepared by annealing undoped InP in pure phosphorus (PP) and iron phosphide (IP) ambient. Defects are much fewer in IP SI-InP than in PP SI-InP. Deep-level-related PL emission could only be detected in IP SI-InP. The results indicate that Fe diffusion inhibits the thermal formation of a number of defects in annealed InP. A complex defect has been formed in the annealing process in the presence of Fe.
Keywordindium phosphide annealing semi-insulating defect diffusion
DOI10.1143/JJAP.41.1929
Indexed BySCI
Language英语
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000175703100005
PublisherINST PURE APPLIED PHYSICS
Citation statistics
Cited Times:10[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/113770
Collection中国科学院金属研究所
Corresponding AuthorZhao, YW
Affiliation1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Mat Sci Lab, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Zhao, YW,Dong, HW,Jiao, JH,et al. Fe-diffusion-induced defects in InP annealed in iron phosphide ambient[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,2002,41(4A):1929-1931.
APA Zhao, YW,Dong, HW,Jiao, JH,Zhao, JQ,&Lin, LY.(2002).Fe-diffusion-induced defects in InP annealed in iron phosphide ambient.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,41(4A),1929-1931.
MLA Zhao, YW,et al."Fe-diffusion-induced defects in InP annealed in iron phosphide ambient".JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41.4A(2002):1929-1931.
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