Fe-diffusion-induced defects in InP annealed in iron phosphide ambient

doi:10.1143/JJAP.41.1929

IMR OpenIR

	Fe-diffusion-induced defects in InP annealed in iron phosphide ambient
	Zhao, YW ; Dong, HW ; Jiao, JH ; Zhao, JQ ; Lin, LY
通讯作者	Zhao, YW()
	2002-04-01
发表期刊	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
ISSN	0021-4922
卷号	41 期号:4A 页码:1929-1931
摘要	Photoluminescence (PL) and photo induced current transient spectroscopy (PICTS) have been used to study deep levels in semi-insulating (SI) InP prepared by annealing undoped InP in pure phosphorus (PP) and iron phosphide (IP) ambient. Defects are much fewer in IP SI-InP than in PP SI-InP. Deep-level-related PL emission could only be detected in IP SI-InP. The results indicate that Fe diffusion inhibits the thermal formation of a number of defects in annealed InP. A complex defect has been formed in the annealing process in the presence of Fe.
关键词	indium phosphide annealing semi-insulating defect diffusion
DOI	10.1143/JJAP.41.1929
收录类别	SCI
语种	英语
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000175703100005
出版者	INST PURE APPLIED PHYSICS
引用统计	被引频次：11[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/113770
专题	中国科学院金属研究所
通讯作者	Zhao, YW
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Mat Sci Lab, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhao, YW,Dong, HW,Jiao, JH,et al. Fe-diffusion-induced defects in InP annealed in iron phosphide ambient[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,2002,41(4A):1929-1931.
APA	Zhao, YW,Dong, HW,Jiao, JH,Zhao, JQ,&Lin, LY.(2002).Fe-diffusion-induced defects in InP annealed in iron phosphide ambient.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,41(4A),1929-1931.
MLA	Zhao, YW,et al."Fe-diffusion-induced defects in InP annealed in iron phosphide ambient".JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41.4A(2002):1929-1931.