Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence

doi:10.1063/1.1482419

IMR OpenIR

	Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
	Ling, CC ; Mui, WK ; Lam, CH ; Beling, CD ; Fung, S ; Lui, MK ; Cheah, KW ; Li, KF ; Zhao, YW ; Gong, M
通讯作者	Ling, CC(ccling@hku.hk)
	2002-05-27
发表期刊	APPLIED PHYSICS LETTERS
ISSN	0003-6951
卷号	80 期号:21 页码:3934-3936
摘要	Positron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314 ps positron lifetime component was attributed to Ga vacancy (V(Ga)) related defect. Isochronal annealing studies showed at 300 degreesC annealing, the 314 ps positron lifetime component and the two observed PL signals (777 and 797 meV) disappeared, which gave clear and strong evidence for their correlation. However, the hole concentration (similar to2x10(17) cm(-3)) was observed to be independent of the annealing temperature. Although the residual acceptor is generally related to the V(Ga) defect, at least for cases with annealing temperatures above 300 degreesC, V(Ga) is not the acceptor responsible for the p-type conduction. (C) 2002 American Institute of Physics.
DOI	10.1063/1.1482419
收录类别	SCI
语种	英语
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000175709000018
出版者	AMER INST PHYSICS
引用统计	被引频次：24[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/114597
专题	中国科学院金属研究所
通讯作者	Ling, CC
作者单位	1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China 2.Hong Kong Baptist Univ, Dept Phys, Kowloon Tong, Hong Kong, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 4.Sichuan Univ, Dept Phys, Chengdu 610064, Peoples R China
推荐引用方式 GB/T 7714	Ling, CC,Mui, WK,Lam, CH,et al. Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence[J]. APPLIED PHYSICS LETTERS,2002,80(21):3934-3936.
APA	Ling, CC.,Mui, WK.,Lam, CH.,Beling, CD.,Fung, S.,...&Gong, M.(2002).Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence.APPLIED PHYSICS LETTERS,80(21),3934-3936.
MLA	Ling, CC,et al."Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence".APPLIED PHYSICS LETTERS 80.21(2002):3934-3936.