Creation and suppression of point defects through a kick-out substitution process of Fe in InP

doi:10.1063/1.1473695

IMR OpenIR

	Creation and suppression of point defects through a kick-out substitution process of Fe in InP
	Zhao, YW ; Dong, HW ; Chen, YH ; Zhang, YH ; Jiao, JH ; Zhao, JQ ; Lin, LY ; Fung, S
通讯作者	Zhao, YW()
	2002-04-22
发表期刊	APPLIED PHYSICS LETTERS
ISSN	0003-6951
卷号	80 期号:16 页码:2878-2879
摘要	Indium antisite defect In-P-related photoluminescence has been observed in Fe-diffused semi-insulating (SI) InP. Compared to annealed undoped or Fe-predoped SI InP, there are fewer defects in SI InP obtained by long-duration, high-temperature Fe diffusion. The suppression of the formation of point defects in Fe-diffused SI InP can be explained in terms of the complete occupation by Fe at indium vacancy. The In-P defect is enhanced by the indium interstitial that is caused by the kick out of In and the substitution at the indium site of Fe in the diffusion process. Through these Fe-diffusion results, the nature of the defects in annealed undoped SI InP is better understood. (C) 2002 American Institute of Physics.
DOI	10.1063/1.1473695
收录类别	SCI
语种	英语
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000175068900020
出版者	AMER INST PHYSICS
引用统计	被引频次：22[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/115323
专题	中国科学院金属研究所
通讯作者	Zhao, YW
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Zhao, YW,Dong, HW,Chen, YH,et al. Creation and suppression of point defects through a kick-out substitution process of Fe in InP[J]. APPLIED PHYSICS LETTERS,2002,80(16):2878-2879.
APA	Zhao, YW.,Dong, HW.,Chen, YH.,Zhang, YH.,Jiao, JH.,...&Fung, S.(2002).Creation and suppression of point defects through a kick-out substitution process of Fe in InP.APPLIED PHYSICS LETTERS,80(16),2878-2879.
MLA	Zhao, YW,et al."Creation and suppression of point defects through a kick-out substitution process of Fe in InP".APPLIED PHYSICS LETTERS 80.16(2002):2878-2879.