Creation and suppression of point defects through a kick-out substitution process of Fe in InP | |
Zhao, YW; Dong, HW; Chen, YH; Zhang, YH; Jiao, JH; Zhao, JQ; Lin, LY; Fung, S | |
Corresponding Author | Zhao, YW() |
2002-04-22 | |
Source Publication | APPLIED PHYSICS LETTERS
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ISSN | 0003-6951 |
Volume | 80Issue:16Pages:2878-2879 |
Abstract | Indium antisite defect In-P-related photoluminescence has been observed in Fe-diffused semi-insulating (SI) InP. Compared to annealed undoped or Fe-predoped SI InP, there are fewer defects in SI InP obtained by long-duration, high-temperature Fe diffusion. The suppression of the formation of point defects in Fe-diffused SI InP can be explained in terms of the complete occupation by Fe at indium vacancy. The In-P defect is enhanced by the indium interstitial that is caused by the kick out of In and the substitution at the indium site of Fe in the diffusion process. Through these Fe-diffusion results, the nature of the defects in annealed undoped SI InP is better understood. (C) 2002 American Institute of Physics. |
DOI | 10.1063/1.1473695 |
Indexed By | SCI |
Language | 英语 |
WOS Research Area | Physics |
WOS Subject | Physics, Applied |
WOS ID | WOS:000175068900020 |
Publisher | AMER INST PHYSICS |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.imr.ac.cn/handle/321006/115323 |
Collection | 中国科学院金属研究所 |
Corresponding Author | Zhao, YW |
Affiliation | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China |
Recommended Citation GB/T 7714 | Zhao, YW,Dong, HW,Chen, YH,et al. Creation and suppression of point defects through a kick-out substitution process of Fe in InP[J]. APPLIED PHYSICS LETTERS,2002,80(16):2878-2879. |
APA | Zhao, YW.,Dong, HW.,Chen, YH.,Zhang, YH.,Jiao, JH.,...&Fung, S.(2002).Creation and suppression of point defects through a kick-out substitution process of Fe in InP.APPLIED PHYSICS LETTERS,80(16),2878-2879. |
MLA | Zhao, YW,et al."Creation and suppression of point defects through a kick-out substitution process of Fe in InP".APPLIED PHYSICS LETTERS 80.16(2002):2878-2879. |
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