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Creation and suppression of point defects through a kick-out substitution process of Fe in InP
Zhao, YW; Dong, HW; Chen, YH; Zhang, YH; Jiao, JH; Zhao, JQ; Lin, LY; Fung, S
Corresponding AuthorZhao, YW()
2002-04-22
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume80Issue:16Pages:2878-2879
AbstractIndium antisite defect In-P-related photoluminescence has been observed in Fe-diffused semi-insulating (SI) InP. Compared to annealed undoped or Fe-predoped SI InP, there are fewer defects in SI InP obtained by long-duration, high-temperature Fe diffusion. The suppression of the formation of point defects in Fe-diffused SI InP can be explained in terms of the complete occupation by Fe at indium vacancy. The In-P defect is enhanced by the indium interstitial that is caused by the kick out of In and the substitution at the indium site of Fe in the diffusion process. Through these Fe-diffusion results, the nature of the defects in annealed undoped SI InP is better understood. (C) 2002 American Institute of Physics.
DOI10.1063/1.1473695
Indexed BySCI
Language英语
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000175068900020
PublisherAMER INST PHYSICS
Citation statistics
Cited Times:22[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/115323
Collection中国科学院金属研究所
Corresponding AuthorZhao, YW
Affiliation1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
2.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Recommended Citation
GB/T 7714
Zhao, YW,Dong, HW,Chen, YH,et al. Creation and suppression of point defects through a kick-out substitution process of Fe in InP[J]. APPLIED PHYSICS LETTERS,2002,80(16):2878-2879.
APA Zhao, YW.,Dong, HW.,Chen, YH.,Zhang, YH.,Jiao, JH.,...&Fung, S.(2002).Creation and suppression of point defects through a kick-out substitution process of Fe in InP.APPLIED PHYSICS LETTERS,80(16),2878-2879.
MLA Zhao, YW,et al."Creation and suppression of point defects through a kick-out substitution process of Fe in InP".APPLIED PHYSICS LETTERS 80.16(2002):2878-2879.
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