| Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour | |
| Dong, HW; Zhao, YW; Lu, HP; Jiao, JH; Zhao, JQ; Lin, LY | |
| Corresponding Author | Dong, HW() |
| 2002-06-01 | |
| Source Publication | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| ISSN | 0268-1242 |
| Volume | 17Issue:6Pages:570-574 |
| Abstract | We have investigated the photoluminescence mapping characteristics of semi-insulating (SI) InP wafers obtained by annealing in iron phosphide ambience (FeP2-annealed). Compared with as-grown Fe-doped and undoped SI InP wafers prepared by annealing in pure phosphorus vapour (P-annealed), the FeP2-annealed ST InP wafer has been found to exhibit a better photoluminescence uniformity. Radial Hall measurements also show that there is a better resistivity uniformity on the FeP2-annealed Sl InP wafer. When comparing the distribution of deep levels between the annealed wafers measured by optical transient Current spectroscopy, we find that the incorporation of iron atoms into the Sl InP Suppresses the formation of a few defects. The correlation observed in this study implies that annealing in iron phosphorus ambience makes Fe atoms diffuse uniformly and occupy the indium site in the Sl InP lattice. As it stands, we believe that annealing undoped conductive InP in iron phosphide vapour is an effective means to obtain semi-insulating InP wafers with superior uniformity. |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Engineering ; Materials Science ; Physics |
| WOS Subject | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| WOS ID | WOS:000176642800014 |
| Publisher | IOP PUBLISHING LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/115741 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Dong, HW |
| Affiliation | Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Dong, HW,Zhao, YW,Lu, HP,et al. Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2002,17(6):570-574. |
| APA | Dong, HW,Zhao, YW,Lu, HP,Jiao, JH,Zhao, JQ,&Lin, LY.(2002).Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,17(6),570-574. |
| MLA | Dong, HW,et al."Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 17.6(2002):570-574. |
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