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Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour
Dong, HW; Zhao, YW; Lu, HP; Jiao, JH; Zhao, JQ; Lin, LY
Corresponding AuthorDong, HW()
2002-06-01
Source PublicationSEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN0268-1242
Volume17Issue:6Pages:570-574
AbstractWe have investigated the photoluminescence mapping characteristics of semi-insulating (SI) InP wafers obtained by annealing in iron phosphide ambience (FeP2-annealed). Compared with as-grown Fe-doped and undoped SI InP wafers prepared by annealing in pure phosphorus vapour (P-annealed), the FeP2-annealed ST InP wafer has been found to exhibit a better photoluminescence uniformity. Radial Hall measurements also show that there is a better resistivity uniformity on the FeP2-annealed Sl InP wafer. When comparing the distribution of deep levels between the annealed wafers measured by optical transient Current spectroscopy, we find that the incorporation of iron atoms into the Sl InP Suppresses the formation of a few defects. The correlation observed in this study implies that annealing in iron phosphorus ambience makes Fe atoms diffuse uniformly and occupy the indium site in the Sl InP lattice. As it stands, we believe that annealing undoped conductive InP in iron phosphide vapour is an effective means to obtain semi-insulating InP wafers with superior uniformity.
Indexed BySCI
Language英语
WOS Research AreaEngineering ; Materials Science ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter
WOS IDWOS:000176642800014
PublisherIOP PUBLISHING LTD
Citation statistics
Cited Times:7[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/115741
Collection中国科学院金属研究所
Corresponding AuthorDong, HW
AffiliationChinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Dong, HW,Zhao, YW,Lu, HP,et al. Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2002,17(6):570-574.
APA Dong, HW,Zhao, YW,Lu, HP,Jiao, JH,Zhao, JQ,&Lin, LY.(2002).Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,17(6),570-574.
MLA Dong, HW,et al."Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 17.6(2002):570-574.
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