Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour

IMR OpenIR

	Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour
	Dong, HW; Zhao, YW; Lu, HP; Jiao, JH; Zhao, JQ; Lin, LY
通讯作者	Dong, HW()
	2002-06-01
发表期刊	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN	0268-1242
卷号	17 期号:6 页码:570-574
摘要	We have investigated the photoluminescence mapping characteristics of semi-insulating (SI) InP wafers obtained by annealing in iron phosphide ambience (FeP2-annealed). Compared with as-grown Fe-doped and undoped SI InP wafers prepared by annealing in pure phosphorus vapour (P-annealed), the FeP2-annealed ST InP wafer has been found to exhibit a better photoluminescence uniformity. Radial Hall measurements also show that there is a better resistivity uniformity on the FeP2-annealed Sl InP wafer. When comparing the distribution of deep levels between the annealed wafers measured by optical transient Current spectroscopy, we find that the incorporation of iron atoms into the Sl InP Suppresses the formation of a few defects. The correlation observed in this study implies that annealing in iron phosphorus ambience makes Fe atoms diffuse uniformly and occupy the indium site in the Sl InP lattice. As it stands, we believe that annealing undoped conductive InP in iron phosphide vapour is an effective means to obtain semi-insulating InP wafers with superior uniformity.
收录类别	SCI
语种	英语
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter
WOS记录号	WOS:000176642800014
出版者	IOP PUBLISHING LTD
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/115741
专题	中国科学院金属研究所
通讯作者	Dong, HW
作者单位	Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Dong, HW,Zhao, YW,Lu, HP,et al. Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2002,17(6):570-574.
APA	Dong, HW,Zhao, YW,Lu, HP,Jiao, JH,Zhao, JQ,&Lin, LY.(2002).Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,17(6),570-574.
MLA	Dong, HW,et al."Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 17.6(2002):570-574.