Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy

doi:10.1016/S0022-0248(02)02488-0

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	Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy
	Dong, HW; Zhao, YW; Zeng, YP; Jiao, JH; Li, JM; Lin, LY
通讯作者	Dong, HW()
	2003-04-01
发表期刊	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
卷号	250 期号:3-4 页码:364-369
摘要	Tensile-strained InAlAs layers have been grown by solid-source molecular beam epitaxy on as-grown Fe-doped semi-insulating (SI) InP substrates and undoped SI InP substrates obtained by annealing undoped conductive InP wafers (wafer-annealed InP). The effect of the two substrates on InAlAs epilayers and InAlAs/InP type II heterostructures has been studied by using a variety of characterization techniques. Our calculation data proved that the out-diffusion of Fe atoms in InP substrate may not take place due to their low diffusion, coefficient. Double-crystal X-ray diffraction measurements show that the lattice mismatch between the InAlAs layers and the two substrates is different, which is originated from their different Fe concentrations. Furthermore, photoluminescence results indicate that the type II heterostructure grown on the wafer-annealed InP substrate exhibits better optical and interface properties than that grown on the as-grown Fe-doped substrate. We have also given a physically coherent explanation on the basis of these investigations. (C) 2003 Elsevier Science B.V. All rights reserved.
关键词	diffusion interfaces substrates molecular beam epitaxy phosphides semiconducting indium phosphide
DOI	10.1016/S0022-0248(02)02488-0
收录类别	SCI
语种	英语
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000181517900015
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：6[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/116031
专题	中国科学院金属研究所
通讯作者	Dong, HW
作者单位	Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Dong, HW,Zhao, YW,Zeng, YP,et al. Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2003,250(3-4):364-369.
APA	Dong, HW,Zhao, YW,Zeng, YP,Jiao, JH,Li, JM,&Lin, LY.(2003).Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,250(3-4),364-369.
MLA	Dong, HW,et al."Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 250.3-4(2003):364-369.