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Undoped semi-insulating indium phosphide (InP) and its applications
Dong, HW; Zhao, YW; Jiao, JH; Zeng, YP; Li, JM; Lin, LY
Corresponding AuthorDong, HW()
2003-02-01
Source PublicationCHINESE SCIENCE BULLETIN
ISSN1001-6538
Volume48Issue:4Pages:313-314
Indexed BySCI
Language英语
WOS Research AreaScience & Technology - Other Topics
WOS SubjectMultidisciplinary Sciences
WOS IDWOS:000181441800001
PublisherSCIENCE CHINA PRESS
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Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/116146
Collection中国科学院金属研究所
Corresponding AuthorDong, HW
AffiliationChinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Dong, HW,Zhao, YW,Jiao, JH,et al. Undoped semi-insulating indium phosphide (InP) and its applications[J]. CHINESE SCIENCE BULLETIN,2003,48(4):313-314.
APA Dong, HW,Zhao, YW,Jiao, JH,Zeng, YP,Li, JM,&Lin, LY.(2003).Undoped semi-insulating indium phosphide (InP) and its applications.CHINESE SCIENCE BULLETIN,48(4),313-314.
MLA Dong, HW,et al."Undoped semi-insulating indium phosphide (InP) and its applications".CHINESE SCIENCE BULLETIN 48.4(2003):313-314.
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