| Annealing and activation of silicon implanted in semi-insulating InP substrates | |
| Dong, HW; Zhao, YW; Li, JM | |
| Corresponding Author | Dong, HW() |
| 2003-08-01 | |
| Source Publication | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
 |
| ISSN | 1369-8001 |
| Volume | 6Issue:4Pages:215-218 |
| Abstract | We have investigated the annealing and activation of silicon implanted in both as-grown Fe-doped semi-insulating (SI) InP substrate and undoped SI InP substrate obtained by annealing high purity conductive InP wafer (wafer-annealed). Si implantations were performed at an energy of 500 keV and a dose of 1 X 10(15) cm(-2). Following the implantations, rapid thermal annealing (RTA) cycles were carried out for 30 s at different temperatures. The results of Raman measurements show that for 700degreesC/30s RTA, the two Si-implanted SI InP substrates have acquired a high degree of lattice recovery and electrical activation. However, further Hall measurements indicate that the carrier concentration of the wafer-annealed SI InP substrate is about three times higher than that of the as-grown Fe-doped SI InP substrate. The difference can be ascribed to the low Fe concentration of the wafer-annealed SI InP substrate. These experimental data imply that the use of the wafer-annealed SI InP substrate can be conducive to the improvement of InP-based device performances. (C) 2003 Elsevier Ltd. All rights reserved. |
| Keyword | semi-insulating InP ion implantation silicon annealing activation |
| DOI | 10.1016/j.mssp.2003.08.002 |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Engineering ; Materials Science ; Physics |
| WOS Subject | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| WOS ID | WOS:000187037700009 |
| Publisher | ELSEVIER SCI LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/116474 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Dong, HW |
| Affiliation | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China |
| Recommended Citation GB/T 7714 | Dong, HW,Zhao, YW,Li, JM. Annealing and activation of silicon implanted in semi-insulating InP substrates[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2003,6(4):215-218. |
| APA | Dong, HW,Zhao, YW,&Li, JM.(2003).Annealing and activation of silicon implanted in semi-insulating InP substrates.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,6(4),215-218. |
| MLA | Dong, HW,et al."Annealing and activation of silicon implanted in semi-insulating InP substrates".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 6.4(2003):215-218. |
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