Annealing and activation of silicon implanted in semi-insulating InP substrates

doi:10.1016/j.mssp.2003.08.002

IMR OpenIR

	Annealing and activation of silicon implanted in semi-insulating InP substrates
	Dong, HW ; Zhao, YW ; Li, JM
通讯作者	Dong, HW()
	2003-08-01
发表期刊	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN	1369-8001
卷号	6 期号:4 页码:215-218
摘要	We have investigated the annealing and activation of silicon implanted in both as-grown Fe-doped semi-insulating (SI) InP substrate and undoped SI InP substrate obtained by annealing high purity conductive InP wafer (wafer-annealed). Si implantations were performed at an energy of 500 keV and a dose of 1 X 10(15) cm(-2). Following the implantations, rapid thermal annealing (RTA) cycles were carried out for 30 s at different temperatures. The results of Raman measurements show that for 700degreesC/30s RTA, the two Si-implanted SI InP substrates have acquired a high degree of lattice recovery and electrical activation. However, further Hall measurements indicate that the carrier concentration of the wafer-annealed SI InP substrate is about three times higher than that of the as-grown Fe-doped SI InP substrate. The difference can be ascribed to the low Fe concentration of the wafer-annealed SI InP substrate. These experimental data imply that the use of the wafer-annealed SI InP substrate can be conducive to the improvement of InP-based device performances. (C) 2003 Elsevier Ltd. All rights reserved.
关键词	semi-insulating InP ion implantation silicon annealing activation
DOI	10.1016/j.mssp.2003.08.002
收录类别	SCI
语种	英语
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000187037700009
出版者	ELSEVIER SCI LTD
引用统计	被引频次：1[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/116476
专题	中国科学院金属研究所
通讯作者	Dong, HW
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Dong, HW,Zhao, YW,Li, JM. Annealing and activation of silicon implanted in semi-insulating InP substrates[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2003,6(4):215-218.
APA	Dong, HW,Zhao, YW,&Li, JM.(2003).Annealing and activation of silicon implanted in semi-insulating InP substrates.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,6(4),215-218.
MLA	Dong, HW,et al."Annealing and activation of silicon implanted in semi-insulating InP substrates".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 6.4(2003):215-218.