| Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances | |
| Dong, ZY; Zhao, YW; Zeng, YP; Duan, ML; Sun, WR; Jiao, JH; Lin, LY | |
| Corresponding Author | Dong, ZY() |
| 2003-11-01 | |
| Source Publication | JOURNAL OF CRYSTAL GROWTH
 |
| ISSN | 0022-0248 |
| Volume | 259Issue:1-2Pages:1-7 |
| Abstract | Microdefects originating from impurity-dislocation interactions in undoped InP that had been annealed in phosphorus and iron phosphide ambiances have been studied using optical microscopy. The electrical uniformity of the annealed wafer is improved by removing impurity aggregation around dislocations and by eliminating impurity striations in the annealing process. Compared to as-grown Fe-doped semi-insulating (SI) material, SI wafers obtained by annealing undoped InP in iron phosphide ambiances have better uniformity. This is attributed to the avoidance of Fe aggregation around dislocations and dislocation clusters, Fe precipitation and impurity striations, and is related to the use of a low concentration of Fe in the annealed material. The influence of Fe diffusion on the migration of dislocations in the annealing process has been studied and reviewed. (C) 2003 Elsevier B.V. All rights reserved. |
| Keyword | annealing defects etching semiconducting indium phosphide |
| DOI | 10.1016/j.jcrysgro.2003.07.009 |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| WOS ID | WOS:000186123700001 |
| Publisher | ELSEVIER SCIENCE BV |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/116900 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Dong, ZY |
| Affiliation | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Dong, ZY,Zhao, YW,Zeng, YP,et al. Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances[J]. JOURNAL OF CRYSTAL GROWTH,2003,259(1-2):1-7. |
| APA | Dong, ZY.,Zhao, YW.,Zeng, YP.,Duan, ML.,Sun, WR.,...&Lin, LY.(2003).Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances.JOURNAL OF CRYSTAL GROWTH,259(1-2),1-7. |
| MLA | Dong, ZY,et al."Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances".JOURNAL OF CRYSTAL GROWTH 259.1-2(2003):1-7. |
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