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Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances
Dong, ZY; Zhao, YW; Zeng, YP; Duan, ML; Sun, WR; Jiao, JH; Lin, LY
Corresponding AuthorDong, ZY()
2003-11-01
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume259Issue:1-2Pages:1-7
AbstractMicrodefects originating from impurity-dislocation interactions in undoped InP that had been annealed in phosphorus and iron phosphide ambiances have been studied using optical microscopy. The electrical uniformity of the annealed wafer is improved by removing impurity aggregation around dislocations and by eliminating impurity striations in the annealing process. Compared to as-grown Fe-doped semi-insulating (SI) material, SI wafers obtained by annealing undoped InP in iron phosphide ambiances have better uniformity. This is attributed to the avoidance of Fe aggregation around dislocations and dislocation clusters, Fe precipitation and impurity striations, and is related to the use of a low concentration of Fe in the annealed material. The influence of Fe diffusion on the migration of dislocations in the annealing process has been studied and reviewed. (C) 2003 Elsevier B.V. All rights reserved.
Keywordannealing defects etching semiconducting indium phosphide
DOI10.1016/j.jcrysgro.2003.07.009
Indexed BySCI
Language英语
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000186123700001
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/116900
Collection中国科学院金属研究所
Corresponding AuthorDong, ZY
AffiliationChinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Dong, ZY,Zhao, YW,Zeng, YP,et al. Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances[J]. JOURNAL OF CRYSTAL GROWTH,2003,259(1-2):1-7.
APA Dong, ZY.,Zhao, YW.,Zeng, YP.,Duan, ML.,Sun, WR.,...&Lin, LY.(2003).Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances.JOURNAL OF CRYSTAL GROWTH,259(1-2),1-7.
MLA Dong, ZY,et al."Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances".JOURNAL OF CRYSTAL GROWTH 259.1-2(2003):1-7.
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