Effects of annealing ambient on the formation of compensation defects in InP

doi:10.1063/1.1531230

IMR OpenIR

	Effects of annealing ambient on the formation of compensation defects in InP
	Deng, AH ; Mascher, P ; Zhao, YW ; Lin, LY
通讯作者	Deng, AH()
	2003-01-15
发表期刊	JOURNAL OF APPLIED PHYSICS
ISSN	0021-8979
卷号	93 期号:2 页码:930-932
摘要	Positron annihilation lifetime (PAL) and photoinduced current transient spectroscopies (PICTS) have been employed to study the formation of compensation defects in undoped InP under different annealing processes with pure phosphorus (PP) ambience and iron phosphide (IP) ambience, respectively. The different annealing ambiences convert the as-grown n-type undoped InP into two types of semi-insulating (SI) states. The positron average lifetimes of as-grown InP, PP SI-InP, and IP SI-InP are found to be 246, 251, and 243 ps, respectively, which are all longer than the bulk lifetime of 240 ps, indicating the existence of vacancy-type positron-trapping defects. For as-grown InP, VInH4 complexes are the dominant defects. They dissociate into VInHn(0less than or equal tonless than or equal to3) acceptor vacancies under PP ambience annealing, compensating the residual shallow donors and turning the material semi-insulating. In forming IP SI-InP, diffusion of iron into V-In complexes under IP ambience annealing produces the substitutional compensation defect Fe-In, causing a shorter positron average lifetime. The PICTS measurements show that a group of vacancy-type defects has been suppressed by iron diffusion during the annealing process, which is in good agreement with the PAL results. (C) 2003 American Institute of Physics.
DOI	10.1063/1.1531230
收录类别	SCI
语种	英语
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000180134200020
出版者	AMER INST PHYSICS
引用统计	被引频次：15[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/118017
专题	中国科学院金属研究所
通讯作者	Deng, AH
作者单位	1.Sichuan Univ, Dept Appl Phys, Sichuan 610065, Peoples R China 2.McMaster Univ, Dept Engn Phys, Ctr Electrophoton Mat & Devices, Hamilton, ON L8S 4L7, Canada 3.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Deng, AH,Mascher, P,Zhao, YW,et al. Effects of annealing ambient on the formation of compensation defects in InP[J]. JOURNAL OF APPLIED PHYSICS,2003,93(2):930-932.
APA	Deng, AH,Mascher, P,Zhao, YW,&Lin, LY.(2003).Effects of annealing ambient on the formation of compensation defects in InP.JOURNAL OF APPLIED PHYSICS,93(2),930-932.
MLA	Deng, AH,et al."Effects of annealing ambient on the formation of compensation defects in InP".JOURNAL OF APPLIED PHYSICS 93.2(2003):930-932.