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Gate tunable giant anisotropic resistance in ultra-thin GaTe
Wang, Hanwen1,2; Chen, Mao-Lin1,2; Zhu, Mengjian3; Wang, Yaning1,2; Dong, Baojuan1,2; Sun, Xingdan1,2; Zhang, Xiaorong4,5; Cao, Shimin6,7; Li, Xiaoxi1,2; Huang, Jianqi1,2; Zhang, Lei1,2; Liu, Weilai1,2; Sun, Dongming1,2; Ye, Yu7,8,9; Song, Kepeng10; Wang, Jianjian11; Han, Yu10; Yang, Teng1,2; Guo, Huaihong12; Qin, Chengbing4,5; Xiao, Liantuan4,5; Zhang, Jing5,13; Chen, Jianhao6,7; Han, Zheng1,2,5; Zhang, Zhidong1,2
Corresponding AuthorYang, Teng(Yangteng@imr.ac.cn) ; Qin, Chengbing(hbqin@sxu.edu.cn) ; Chen, Jianhao(jhChen@oku.edu.cn) ; Han, Zheng()
2019-05-24
Source PublicationNATURE COMMUNICATIONS
ISSN2041-1723
Volume10Pages:8
AbstractAnisotropy in crystals arises from different lattice periodicity along different crystallographic directions, and is usually more pronounced in two dimensional (2D) materials. Indeed, in the emerging 2D materials, electrical anisotropy has been one of the recent research focuses. However, key understandings of the in-plane anisotropic resistance in low-symmetry 2D materials, as well as demonstrations of model devices taking advantage of it, have proven difficult. Here, we show that, in few-layered semiconducting GaTe, electrical conductivity anisotropy between x and y directions of the 2D crystal can be gate tuned from several fold to over 10(3). This effect is further demonstrated to yield an anisotropic non-volatile memory behavior in ultra-thin GaTe, when equipped with an architecture of van der Waals floating gate. Our findings of gate-tunable giant anisotropic resistance effect pave the way for potential applications in nanoelectronics such as multifunctional directional memories in the 2D limit.
Funding OrganizationNational Key R&D Program of China ; National Natural Science Foundation of China (NSFC) ; Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC ; CASC, China ; NSFC ; Program of State Key Laboratory of Quantum Optics and Quantum Optics Devices
DOI10.1038/s41467-019-10256-3
Indexed BySCI
Language英语
Funding ProjectNational Key R&D Program of China[2017YFA0304203] ; National Key R&D Program of China[2017YFA0206302] ; National Natural Science Foundation of China (NSFC)[11504385] ; National Natural Science Foundation of China (NSFC)[51627801] ; Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC ; CASC, China[U1537204] ; NSFC[51702146] ; Program of State Key Laboratory of Quantum Optics and Quantum Optics Devices[KF201816]
WOS Research AreaScience & Technology - Other Topics
WOS SubjectMultidisciplinary Sciences
WOS IDWOS:000468857900009
PublisherNATURE PUBLISHING GROUP
Citation statistics
Cited Times:19[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/133477
Collection中国科学院金属研究所
Corresponding AuthorYang, Teng; Qin, Chengbing; Chen, Jianhao; Han, Zheng
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China
3.Natl Univ Def Technol, Coll Adv Interdisciplinary Studies, Changsha 410073, Hunan, Peoples R China
4.Shanxi Univ, Inst Laser Spect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Shanxi, Peoples R China
5.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China
6.Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
7.Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
8.Peking Univ, State Key Lab Mesoscop Phys, Beijing, Peoples R China
9.Peking Univ, Sch Phys, Beijing, Peoples R China
10.King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Adv Membranes & Porous Mat Ctr, Thuwal 239666900, Saudi Arabia
11.Chongqing Univ, Inst Adv Interdisciplinary Studies, Multiscale Porous Mat Ctr, Chongqing 400044, Peoples R China
12.Liaoning Shihua Univ, Coll Sci, Fushun 113001, Peoples R China
13.Shanxi Univ, Inst Optoelect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Shanxi, Peoples R China
Recommended Citation
GB/T 7714
Wang, Hanwen,Chen, Mao-Lin,Zhu, Mengjian,et al. Gate tunable giant anisotropic resistance in ultra-thin GaTe[J]. NATURE COMMUNICATIONS,2019,10:8.
APA Wang, Hanwen.,Chen, Mao-Lin.,Zhu, Mengjian.,Wang, Yaning.,Dong, Baojuan.,...&Zhang, Zhidong.(2019).Gate tunable giant anisotropic resistance in ultra-thin GaTe.NATURE COMMUNICATIONS,10,8.
MLA Wang, Hanwen,et al."Gate tunable giant anisotropic resistance in ultra-thin GaTe".NATURE COMMUNICATIONS 10(2019):8.
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