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Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors
Xia, Xiuxin1,2; Sun, Xingdan1,2; Wang, Hanwen1,2; Li, Xiaoxi1,2,3
Corresponding AuthorWang, Hanwen(hwwang15s@imr.ac.cn) ; Li, Xiaoxi(xxli@imr.ac.cn)
2020-03-01
Source PublicationCRYSTALS
ISSN2073-4352
Volume10Issue:3Pages:9
AbstractRecently, gallium telluride (GaTe) has triggered much attention for its unique properties and offers excellent opportunities for nanoelectronics. Yet it is a challenge to bridge the semiconducting few-layered GaTe crystals with metallic electrodes for device applications. Here, we report a method on fabricating electrode contacts to few-layered GaTe field effect transistors (FETs) by controlled micro-alloying. The devices show linear I-V curves and on/off ratio of similar to 104 on HfO2 substrates. Kelvin probe force microscope (KPFM) and energy dispersion spectrum (EDS) are performed to characterize the electrode contacts, suggesting that the lowered Schottky barrier by the diffusion of Pd element into the GaTe conduction channel may play an important role. Our findings provide a strategy for the engineering of electrode contact for future device applications based on 2DLMs.
Keywordcontact alloying GaTe Pd electrode
Funding OrganizationNational Key R&D Program of China ; National Natural Science Foundation of China (NSFC)
DOI10.3390/cryst10030144
Indexed BySCI
Language英语
Funding ProjectNational Key R&D Program of China[2019YFA0307800] ; National Natural Science Foundation of China (NSFC)[11974357] ; National Natural Science Foundation of China (NSFC)[U1932151] ; National Natural Science Foundation of China (NSFC)[51627801]
WOS Research AreaCrystallography ; Materials Science
WOS SubjectCrystallography ; Materials Science, Multidisciplinary
WOS IDWOS:000523512100062
PublisherMDPI
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/137885
Collection中国科学院金属研究所
Corresponding AuthorWang, Hanwen; Li, Xiaoxi
Affiliation1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China
3.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China
Recommended Citation
GB/T 7714
Xia, Xiuxin,Sun, Xingdan,Wang, Hanwen,et al. Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors[J]. CRYSTALS,2020,10(3):9.
APA Xia, Xiuxin,Sun, Xingdan,Wang, Hanwen,&Li, Xiaoxi.(2020).Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors.CRYSTALS,10(3),9.
MLA Xia, Xiuxin,et al."Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors".CRYSTALS 10.3(2020):9.
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