Field-Free Switching of a Spin-Orbit-Torque Device Through Interlayer-Coupling-Induced Domain Walls

doi:10.1103/PhysRevApplied.13.044074

IMR OpenIR

	Field-Free Switching of a Spin-Orbit-Torque Device Through Interlayer-Coupling-Induced Domain Walls
	Zhao, Xiaotian 1; Ji, Lianze 2; Liu, Wei 1; Li, Shangkun 1; Liu, Long 1; Song, Yuhang 1; Li, Yang 1; Ma, Jun 1; Sun, Xingdan 1; Wang, Hanwen 1; Zhao, Xinguo 1; Zhang, Zhidong 1
通讯作者	Liu, Wei(wliu@imr.ac.cn)
	2020-04-28
发表期刊	PHYSICAL REVIEW APPLIED
ISSN	2331-7019
卷号	13 期号:4 页码:10
摘要	The spin-orbit-torque (SOT) device is a promising candidate for the next-generation magnetic random-access memory; however, the static in-plane field needed to induce deterministic switching is a main obstacle for its application in circuits. In this work, we employ the exchange coupling between the Co/Ni/Co trilayer and Tb/Co multilayers in a device to form the domain wall (DW), by whose current-driven propagation the field-free magnetization switching is achieved. The SOT efficiency of the device is highly dependent on the chirality of the Neel-type DW. Meanwhile, the coexistence of two switching modes results in an asymmetric switching phase diagram. We find the competition between the uniform external field and the Dzyaloshinskii-Moriya interaction induces negative feedback to the pinning effect, resulting in a sharp switching process and straight DW profile. Finally, a synthetic antiferromagnetic device is investigated by experiment and micromagnetic simulation to verify the feasibility of using this proposal as the free layer of a magnetic tunneling junction.
资助者	State Key Project of Research and Development of China ; National Nature Science Foundation of China
DOI	10.1103/PhysRevApplied.13.044074
收录类别	SCI
语种	英语
资助项目	State Key Project of Research and Development of China[2017YFA0206302] ; National Nature Science Foundation of China[51590883] ; National Nature Science Foundation of China[51771198] ; National Nature Science Foundation of China[51801212]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000529105700004
出版者	AMER PHYSICAL SOC
引用统计	被引频次：18[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/138698
专题	中国科学院金属研究所
通讯作者	Liu, Wei
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Northeastern Univ, Sch Mat Sci & Engn, Key Lab Anisotropy & Texture Mat MOE, Shenyang 110819, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Xiaotian,Ji, Lianze,Liu, Wei,et al. Field-Free Switching of a Spin-Orbit-Torque Device Through Interlayer-Coupling-Induced Domain Walls[J]. PHYSICAL REVIEW APPLIED,2020,13(4):10.
APA	Zhao, Xiaotian.,Ji, Lianze.,Liu, Wei.,Li, Shangkun.,Liu, Long.,...&Zhang, Zhidong.(2020).Field-Free Switching of a Spin-Orbit-Torque Device Through Interlayer-Coupling-Induced Domain Walls.PHYSICAL REVIEW APPLIED,13(4),10.
MLA	Zhao, Xiaotian,et al."Field-Free Switching of a Spin-Orbit-Torque Device Through Interlayer-Coupling-Induced Domain Walls".PHYSICAL REVIEW APPLIED 13.4(2020):10.