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中频反应磁控溅射沉积Al2O3薄膜中迟滞回线的研究
Alternative TitleOn the hysteresis loop in deposition of Al2O3 films prepared by medium-frequentcy reactive magnetron sputtering
廖国进; 巴德纯; 闻立时; 刘斯明; 阎绍峰
2007
Source Publication真空
ISSN1002-0322
Volume44.0Issue:003Pages:32-35
Abstract采用中频磁控反应溅射工艺进行氧化铝薄膜的沉积实验,对该工艺过程中溅射电压和沉积速率与氧流量的“迟滞回线”现象进行了研究。通过对实验现象的分析讨论,解释了薄膜沉积速率变化的原因。
Other AbstractAluminum oxides films were grown by medium-frequency reactive magnetron sputtering. Hysteresis loop observed in the relationship between the sputtering voltage (or the film deposition rate) and the oxygen flow rate was studied. Influence of oxygen partial pressure on oxide layer in the sputtered areas on target surfaces may account for the change in film deposition rate
Keyword迟滞回线 反应溅射 中频溅射 氧化铝薄膜
Indexed ByCSCD
Language中文
CSCD IDCSCD:3170122
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/145656
Collection中国科学院金属研究所
Affiliation中国科学院金属研究所
Recommended Citation
GB/T 7714
廖国进,巴德纯,闻立时,等. 中频反应磁控溅射沉积Al2O3薄膜中迟滞回线的研究[J]. 真空,2007,44.0(003):32-35.
APA 廖国进,巴德纯,闻立时,刘斯明,&阎绍峰.(2007).中频反应磁控溅射沉积Al2O3薄膜中迟滞回线的研究.真空,44.0(003),32-35.
MLA 廖国进,et al."中频反应磁控溅射沉积Al2O3薄膜中迟滞回线的研究".真空 44.0.003(2007):32-35.
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