| Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD | |
| Alternative Title | Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD |
| Qin Fuwen1; Zhang Dong1; Bai Yizhen1; Ju Zhenhe3; Li Shuangmei3; Li Yucai3; Pang Jiaqi1; Bian Jiming1 | |
| 2012 | |
| Source Publication | RARE METALS
 |
| ISSN | 1001-0521 |
| Volume | 31Issue:2Pages:150-153 |
| Abstract | InN films with highly c-axis preferred orientation were deposited on sapphire substrate by low-temperature electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). Trimethyl indium (TMIn) and N-2 were applied as precursors of In and N, respectively. The quality of as-grown InN films were systematically investigated as a function of TMIn fluxes by means of reflection high-energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), and atomic force microscopy (AFM). The results show that the dense and uniform InN films with highly c-axis preferred orientation are successfully achieved on sapphire substrates under optimized TMIn flux of 0.8 ml center dot min(-1). The InN films reported here will provide various opportunities for the development of high efficiency and high-performance semiconductor devices based on InN material. |
| Other Abstract | InN films with highly c-axis preferred orientation were deposited on sapphire substrate by low-temperature electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). Trimethyl indium (TMIn) and N_2 were applied as precursors of In and N, respectively. The quality of as-grown InN films were systematically investigated as a function of TMIn fluxes by means of reflection high-energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), and atomic force microscopy (AFM). The results show that the dense and uniform InN films with highly c-axis preferred orientation are successfully achieved on sapphire substrates under optimized TMIn flux of 0.8 ml min~(-1). The InN films reported here will provide various opportunities for the development of high efficiency and high-performance semiconductor devices based on InN material. |
| Keyword | MOLECULAR-BEAM EPITAXY GROWTH InN films ECR-PEMOCVD sapphire substrates semiconductor devices |
| Indexed By | CSCD |
| Language | 英语 |
| Funding Project | [National Natural Science Foundation of China] ; [Fundamental Research Funds for the Central Universities] ; [Science and Technology Foundation for Higher Education of Liaoning Province, China] ; [Science and Technology Innovation Project Foundation for Higher Education School] |
| CSCD ID | CSCD:4493794 |
| Citation statistics |
Cited Times:4[CSCD]
[CSCD Record]
|
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/147897 |
| Collection | 中国科学院金属研究所 |
| Affiliation | 1.大连大学 2.大连理工大学 3.中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | Qin Fuwen,Zhang Dong,Bai Yizhen,et al. Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD[J]. RARE METALS,2012,31(2):150-153. |
| APA | Qin Fuwen.,Zhang Dong.,Bai Yizhen.,Ju Zhenhe.,Li Shuangmei.,...&Bian Jiming.(2012).Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD.RARE METALS,31(2),150-153. |
| MLA | Qin Fuwen,et al."Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD".RARE METALS 31.2(2012):150-153. |
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