IMR OpenIR
磁控溅射TiO2膜的真空度对薄膜亲水性影响的实验研究
Alternative TitleOxygen Pressure and Hydrophilicity of TiO2 Films Grown by Reactive Magnetron Sputtering
巴德纯; 常学森; 闻立时; 刘坤
2007
Source Publication真空科学与技术学报
ISSN1672-7126
Volume27.0Issue:002Pages:155-158
Abstract采用反应溅射技术可以制备出具有亲水作用的TiO2薄膜。这种TiO2薄膜断面呈现柱状晶体结构。薄膜表面出现不规则起伏。薄膜的晶相主体均为锐钛矿型。TiO2薄膜的光透射谱变化不大。这种TiO2薄膜经紫外光辐照后,可以降低水和TiO2薄膜表面之间的接触角。不同工艺条件下制备的TiO2薄膜接触角相差很大。在纯氧条件下,薄膜制备的真空度对薄膜的亲水性有着决定性的影响。
Other AbstractTitanium oxide ftlms were grown by reactive magnetron sputtering trader different pressures of pure oxygen,ranging from 1,0 Pa to 4.0 Pa, at a fixed oxygen flow rate of 10 cm^3/min.The surface microstructures were characterized with X-ray diffraction(XRD) and atomic force microscopy(AFM). The results show that the film gorwn trader the oxygen pressure of 2.5 Pa displays the best hydrophilicity, Interesting fincling is that ultraviolet light irradiation considerably reduces its water contact angle.Possible mechanism(s) was also tentatively discussed,
KeywordTiO2薄膜 亲水特性 反应溅射 真空度
Indexed ByCSCD
Language中文
CSCD IDCSCD:2726709
Citation statistics
Cited Times:5[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/148184
Collection中国科学院金属研究所
Affiliation中国科学院金属研究所
Recommended Citation
GB/T 7714
巴德纯,常学森,闻立时,等. 磁控溅射TiO2膜的真空度对薄膜亲水性影响的实验研究[J]. 真空科学与技术学报,2007,27.0(002):155-158.
APA 巴德纯,常学森,闻立时,&刘坤.(2007).磁控溅射TiO2膜的真空度对薄膜亲水性影响的实验研究.真空科学与技术学报,27.0(002),155-158.
MLA 巴德纯,et al."磁控溅射TiO2膜的真空度对薄膜亲水性影响的实验研究".真空科学与技术学报 27.0.002(2007):155-158.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[巴德纯]'s Articles
[常学森]'s Articles
[闻立时]'s Articles
Baidu academic
Similar articles in Baidu academic
[巴德纯]'s Articles
[常学森]'s Articles
[闻立时]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[巴德纯]'s Articles
[常学森]'s Articles
[闻立时]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.