In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects

doi:10.1039/c9na00623k

IMR OpenIR

	In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects
	Zhao, Siwen; Dong, Baojuan; Wang, Huide; Wang, Hanwen; Zhang, Yupeng; Han, Zheng Vitto; Zhang, Han
	2020
发表期刊	NANOSCALE ADVANCES
卷号	2 期号:1 页码:109-139
摘要	Low-symmetry layered materials such as black phosphorus (BP) have been revived recently due to their high intrinsic mobility and in-plane anisotropic properties, which can be used in anisotropic electronic and optoelectronic devices. Since the anisotropic properties have a close relationship with their anisotropic structural characters, especially for materials with low-symmetry, exploring new low-symmetry layered materials and investigating their anisotropic properties have inspired numerous research efforts. In this paper, we review the recent experimental progresses on low-symmetry layered materials and their corresponding anisotropic electrical transport, magneto-transport, optoelectronic, thermoelectric, ferroelectric, and piezoelectric properties. The boom of new low-symmetry layered materials with high anisotropy could open up considerable possibilities for next-generation anisotropic multifunctional electronic devices.
DOI	10.1039/c9na00623k
WOS记录号	WOS:000508943100003
引用统计	被引频次：108[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/155729
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Zhao, Siwen,Dong, Baojuan,Wang, Huide,et al. In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects[J]. NANOSCALE ADVANCES,2020,2(1):109-139.
APA	Zhao, Siwen.,Dong, Baojuan.,Wang, Huide.,Wang, Hanwen.,Zhang, Yupeng.,...&Zhang, Han.(2020).In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects.NANOSCALE ADVANCES,2(1),109-139.
MLA	Zhao, Siwen,et al."In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects".NANOSCALE ADVANCES 2.1(2020):109-139.