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Obtaining ultra-high throwing power in Cu electroplating of flexible printed circuit by fast consumption of a suppressor
Wei, Xiang-Fu1,2; Zhu, Qing-Sheng1,2; Guo, Jing-Dong1,2; Shang, Jian-Ku1,2
Corresponding AuthorZhu, Qing-Sheng(qszhu@imr.ac.cn)
2021-10-05
Source PublicationJOURNAL OF SOLID STATE ELECTROCHEMISTRY
ISSN1432-8488
Pages11
AbstractThe high throwing power (TP) value is one of the most important parameters for the Cu electroplating of through-holes in flexible printed circuit (FPC). It was found that an ultra-high TP value could be obtained using a specific suppressor, i.e., iodonitrotetrazolium chloride (INT) in the electrolyte. The ultra-high TP value was attributed to fast-consumption of this suppressor instead of traditional convection-dependence adsorption mechanism. A consumption model was built and simulated to clarify the formation of the increment theta, i.e., the difference of suppressor fractional coverage between the entrance and center of through-holes sidewalls. It revealed that the TP, proportional to the increment theta, was determined by the consumption rate of a suppressor. This simulation results were well consistent with the results of electroplating using INT with different concentration. The electrochemical analysis verified the characteristics of fast consumption of INT due to the reduction reaction. The difference of residual INT between the entrance and center of the plated through-holes confirmed the occurrence of increment theta. These results supported the opinion that the ultra-high TP value was obtained by fast-consumption mechanism of INT suppressor.
KeywordCopper electroplating Throwing power (TP) Flexible printed circuit (FPC) Suppressor
Funding OrganizationNational Natural Science Foundation of China (NSFC) ; Project of Improving the Basic Scientific Research Ability of Young and Middle-aged Teachers in Guangxi Universities
DOI10.1016/j.tsf.2021.138671
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China (NSFC)[51471180] ; National Natural Science Foundation of China (NSFC)[51971231] ; Project of Improving the Basic Scientific Research Ability of Young and Middle-aged Teachers in Guangxi Universities[2021KY1135]
WOS Research AreaElectrochemistry
WOS SubjectElectrochemistry
WOS IDWOS:000703831300001
PublisherSPRINGER
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/166650
Collection中国科学院金属研究所
Corresponding AuthorZhu, Qing-Sheng
Affiliation1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Wei, Xiang-Fu,Zhu, Qing-Sheng,Guo, Jing-Dong,et al. Obtaining ultra-high throwing power in Cu electroplating of flexible printed circuit by fast consumption of a suppressor[J]. JOURNAL OF SOLID STATE ELECTROCHEMISTRY,2021:11.
APA Wei, Xiang-Fu,Zhu, Qing-Sheng,Guo, Jing-Dong,&Shang, Jian-Ku.(2021).Obtaining ultra-high throwing power in Cu electroplating of flexible printed circuit by fast consumption of a suppressor.JOURNAL OF SOLID STATE ELECTROCHEMISTRY,11.
MLA Wei, Xiang-Fu,et al."Obtaining ultra-high throwing power in Cu electroplating of flexible printed circuit by fast consumption of a suppressor".JOURNAL OF SOLID STATE ELECTROCHEMISTRY (2021):11.
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