Obtaining ultra-high throwing power in Cu electroplating of flexible printed circuit by fast consumption of a suppressor

doi:10.1016/j.tsf.2021.138671

IMR OpenIR

	Obtaining ultra-high throwing power in Cu electroplating of flexible printed circuit by fast consumption of a suppressor
	Wei, Xiang-Fu 1,2; Zhu, Qing-Sheng 1,2; Guo, Jing-Dong 1,2; Shang, Jian-Ku 1,2
通讯作者	Zhu, Qing-Sheng(qszhu@imr.ac.cn)
	2021-10-05
发表期刊	JOURNAL OF SOLID STATE ELECTROCHEMISTRY
ISSN	1432-8488
页码	11
摘要	The high throwing power (TP) value is one of the most important parameters for the Cu electroplating of through-holes in flexible printed circuit (FPC). It was found that an ultra-high TP value could be obtained using a specific suppressor, i.e., iodonitrotetrazolium chloride (INT) in the electrolyte. The ultra-high TP value was attributed to fast-consumption of this suppressor instead of traditional convection-dependence adsorption mechanism. A consumption model was built and simulated to clarify the formation of the increment theta, i.e., the difference of suppressor fractional coverage between the entrance and center of through-holes sidewalls. It revealed that the TP, proportional to the increment theta, was determined by the consumption rate of a suppressor. This simulation results were well consistent with the results of electroplating using INT with different concentration. The electrochemical analysis verified the characteristics of fast consumption of INT due to the reduction reaction. The difference of residual INT between the entrance and center of the plated through-holes confirmed the occurrence of increment theta. These results supported the opinion that the ultra-high TP value was obtained by fast-consumption mechanism of INT suppressor.
关键词	Copper electroplating Throwing power (TP) Flexible printed circuit (FPC) Suppressor
资助者	National Natural Science Foundation of China (NSFC) ; Project of Improving the Basic Scientific Research Ability of Young and Middle-aged Teachers in Guangxi Universities
DOI	10.1016/j.tsf.2021.138671
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China (NSFC)[51471180] ; National Natural Science Foundation of China (NSFC)[51971231] ; Project of Improving the Basic Scientific Research Ability of Young and Middle-aged Teachers in Guangxi Universities[2021KY1135]
WOS研究方向	Electrochemistry
WOS类目	Electrochemistry
WOS记录号	WOS:000703831300001
出版者	SPRINGER
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/166650
专题	中国科学院金属研究所
通讯作者	Zhu, Qing-Sheng
作者单位	1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Wei, Xiang-Fu,Zhu, Qing-Sheng,Guo, Jing-Dong,et al. Obtaining ultra-high throwing power in Cu electroplating of flexible printed circuit by fast consumption of a suppressor[J]. JOURNAL OF SOLID STATE ELECTROCHEMISTRY,2021:11.
APA	Wei, Xiang-Fu,Zhu, Qing-Sheng,Guo, Jing-Dong,&Shang, Jian-Ku.(2021).Obtaining ultra-high throwing power in Cu electroplating of flexible printed circuit by fast consumption of a suppressor.JOURNAL OF SOLID STATE ELECTROCHEMISTRY,11.
MLA	Wei, Xiang-Fu,et al."Obtaining ultra-high throwing power in Cu electroplating of flexible printed circuit by fast consumption of a suppressor".JOURNAL OF SOLID STATE ELECTROCHEMISTRY (2021):11.