Hot filament chemical vapor deposition temperature field optimization for diamond films deposited on silicon nitride substrates

doi:10.1088/2053-1591/ac3278

IMR OpenIR

	Hot filament chemical vapor deposition temperature field optimization for diamond films deposited on silicon nitride substrates
	Wu, Yuhou 1; Zhang, Huisen 1,2; Yan, Guangyu 1,2; Liu, Lusheng 3; Cristea, Daniel 4; Wang, He 1,2; Yang, Yumiao 1,2; Shen, Jianhui 1,2
通讯作者	Yan, Guangyu(ygy0813@sjzu.edu.cn)
	2021-11-01
发表期刊	MATERIALS RESEARCH EXPRESS
卷号	8 期号:11 页码:15
摘要	The influence of some key parameters of hot filament chemical vapor deposition (HFCVD) on the temperature distribution during the deposition of diamond coatings on silicon nitride (Si3N4) substrates was assessed with the help of the finite element method. Solid heat transfer, fluid heat transfer and surface radiation heat transfer mechanisms were used to calculate the substrate temperature in the steady state during the deposition process. The accuracy of the model was verified by comparing the simulation model with experimental measurements. The comparison shows that the deviation between the model and the actual substrate temperature measurements is within 3%. Furthermore, a Taguchi orthogonal experiment was designed (3 factors, 3 levels, L9). By changing the number of hot filaments, the distance between the filaments and the substrate, and the separation between two adjacent hot filaments, the influence trend of these parameters on the substrate temperature was assessed, leading to an optimal hot filament arrangement. A deposition experiment was carried out using the optimized parameters, and the results showed that the substrate surface temperature obtained by numerical simulation is highly consistent with the temperature measured by the infrared thermometer. The optimized deposition parameters contributed to a more suitable temperature range and more uniform temperature distribution on the Si3N4 ceramic substrate. The deposited diamond film exhibited uniform crystal quality and grain morphology, thus verifying the validity of the simulation results.
关键词	HFCVD diamond film numerical simulation
资助者	Programme of Introducing Talents of Discipline to Universities (the 111 program) ; National Natural Science Foundation of China ; Shenyang Science and Technology Bureau
DOI	10.1088/2053-1591/ac3278
收录类别	SCI
语种	英语
资助项目	Programme of Introducing Talents of Discipline to Universities (the 111 program)[D18017] ; National Natural Science Foundation of China[51942507] ; Shenyang Science and Technology Bureau[18-400-6-05]
WOS研究方向	Materials Science
WOS类目	Materials Science, Multidisciplinary
WOS记录号	WOS:000717278500001
出版者	IOP Publishing Ltd
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/167209
专题	中国科学院金属研究所
通讯作者	Yan, Guangyu
作者单位	1.Shenyang Jianzhu Univ, Joint Int Res Lab Modern Construct Engn Equipment, Shenyang 110168, Peoples R China 2.Shenyang Jianzhu Univ, Sch Mech Engn, Shenyang 110168, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 4.Transilvania Univ, Mat Sci & Engn Fac, Brasov 500036, Romania
推荐引用方式 GB/T 7714	Wu, Yuhou,Zhang, Huisen,Yan, Guangyu,et al. Hot filament chemical vapor deposition temperature field optimization for diamond films deposited on silicon nitride substrates[J]. MATERIALS RESEARCH EXPRESS,2021,8(11):15.
APA	Wu, Yuhou.,Zhang, Huisen.,Yan, Guangyu.,Liu, Lusheng.,Cristea, Daniel.,...&Shen, Jianhui.(2021).Hot filament chemical vapor deposition temperature field optimization for diamond films deposited on silicon nitride substrates.MATERIALS RESEARCH EXPRESS,8(11),15.
MLA	Wu, Yuhou,et al."Hot filament chemical vapor deposition temperature field optimization for diamond films deposited on silicon nitride substrates".MATERIALS RESEARCH EXPRESS 8.11(2021):15.