| Self-catalytic growth and characterization of AlGaN nanostructures with high Al composition | |
| Liu, Zitong1,3; Shen, Longhai2; Chen, Jianjin2; Zhang, Xinglai3 | |
| Corresponding Author | Shen, Longhai(shenlonghai@163.com) ; Zhang, Xinglai(zhangxl@imr.ac.cn) |
| 2022-04-08 | |
| Source Publication | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| ISSN | 0957-4522 |
| Pages | 9 |
| Abstract | AlGaN ternary alloy nanostructures have emerged as an important building block for optoelectronic devices and exhibit broad application prospects. However, the fabrication of AlGaN nanostructures with high quality, especially high Al composition, by chemical vapor deposition (CVD) is limited by their phase separation. Here, AlGaN ternary alloy nanostructures with Al/Ga atomic ratio more than 90% are synthesized by using CVD method. The AlGaN nanocones and nanorods are obtained by adjusting the Ar/NH3 flow ratio at the same temperature. Furthermore, it is found that the increase of Ar flux is more favorable to the transport of Ga source, which leads to the raise of Ga content in AlGaN nanostructures. On the other hand, the decrease of NH3 flow is conducive to the formation of nanorods. Moreover, the pre-deposited Al powder on Si substrate provides Al-rich growth conditions and nucleation sites for AlGaN nanostructures, which becomes the key to the formation of AlGaN nanostructures with high Al composition. Based on the evolution of morphology, the growth process of AlGaN nanostructures is investigated by a self-catalytic vapor-solid mechanism. |
| Funding Organization | Youth Innovation Promotion Association of the Chinese Academy of Sciences ; Open Project of State Key Laboratory of Superhard Materials, Jilin University |
| DOI | 10.1007/s10854-022-08152-6 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Youth Innovation Promotion Association of the Chinese Academy of Sciences[2019197] ; Open Project of State Key Laboratory of Superhard Materials, Jilin University[202004] |
| WOS Research Area | Engineering ; Materials Science ; Physics |
| WOS Subject | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| WOS ID | WOS:000781264400004 |
| Publisher | SPRINGER |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/172852 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Shen, Longhai; Zhang, Xinglai |
| Affiliation | 1.Shenyang Ligong Univ, Sch Mat Sci & Engn, Shenyang 110159, Peoples R China 2.Shenyang Ligong Univ, Sch Sci, Shenyang 110159, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China |
| Recommended Citation GB/T 7714 | Liu, Zitong,Shen, Longhai,Chen, Jianjin,et al. Self-catalytic growth and characterization of AlGaN nanostructures with high Al composition[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2022:9. |
| APA | Liu, Zitong,Shen, Longhai,Chen, Jianjin,&Zhang, Xinglai.(2022).Self-catalytic growth and characterization of AlGaN nanostructures with high Al composition.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,9. |
| MLA | Liu, Zitong,et al."Self-catalytic growth and characterization of AlGaN nanostructures with high Al composition".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2022):9. |
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment