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Self-catalytic growth and characterization of AlGaN nanostructures with high Al composition
Liu, Zitong1,3; Shen, Longhai2; Chen, Jianjin2; Zhang, Xinglai3
通讯作者Shen, Longhai(shenlonghai@163.com) ; Zhang, Xinglai(zhangxl@imr.ac.cn)
2022-04-08
发表期刊JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN0957-4522
页码9
摘要AlGaN ternary alloy nanostructures have emerged as an important building block for optoelectronic devices and exhibit broad application prospects. However, the fabrication of AlGaN nanostructures with high quality, especially high Al composition, by chemical vapor deposition (CVD) is limited by their phase separation. Here, AlGaN ternary alloy nanostructures with Al/Ga atomic ratio more than 90% are synthesized by using CVD method. The AlGaN nanocones and nanorods are obtained by adjusting the Ar/NH3 flow ratio at the same temperature. Furthermore, it is found that the increase of Ar flux is more favorable to the transport of Ga source, which leads to the raise of Ga content in AlGaN nanostructures. On the other hand, the decrease of NH3 flow is conducive to the formation of nanorods. Moreover, the pre-deposited Al powder on Si substrate provides Al-rich growth conditions and nucleation sites for AlGaN nanostructures, which becomes the key to the formation of AlGaN nanostructures with high Al composition. Based on the evolution of morphology, the growth process of AlGaN nanostructures is investigated by a self-catalytic vapor-solid mechanism.
资助者Youth Innovation Promotion Association of the Chinese Academy of Sciences ; Open Project of State Key Laboratory of Superhard Materials, Jilin University
DOI10.1007/s10854-022-08152-6
收录类别SCI
语种英语
资助项目Youth Innovation Promotion Association of the Chinese Academy of Sciences[2019197] ; Open Project of State Key Laboratory of Superhard Materials, Jilin University[202004]
WOS研究方向Engineering ; Materials Science ; Physics
WOS类目Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号WOS:000781264400004
出版者SPRINGER
引用统计
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/172852
专题中国科学院金属研究所
通讯作者Shen, Longhai; Zhang, Xinglai
作者单位1.Shenyang Ligong Univ, Sch Mat Sci & Engn, Shenyang 110159, Peoples R China
2.Shenyang Ligong Univ, Sch Sci, Shenyang 110159, Peoples R China
3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
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Liu, Zitong,Shen, Longhai,Chen, Jianjin,et al. Self-catalytic growth and characterization of AlGaN nanostructures with high Al composition[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2022:9.
APA Liu, Zitong,Shen, Longhai,Chen, Jianjin,&Zhang, Xinglai.(2022).Self-catalytic growth and characterization of AlGaN nanostructures with high Al composition.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,9.
MLA Liu, Zitong,et al."Self-catalytic growth and characterization of AlGaN nanostructures with high Al composition".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2022):9.
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