| Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe | |
| Lai, Kang1; Ju, Sailong1; Zhu, Hongen2; Wang, Hanwen3; Wu, Hongjian1; Yang, Bingjie4; Zhang, Enrui1; Yang, Ming1; Li, Fangsen4; Cui, Shengtao2; Deng, Xiaohui5; Han, Zheng6,7; Zhu, Mengjian8; Dai, Jiayu1 | |
| Corresponding Author | Han, Zheng(vitto.han@gmail.com) ; Zhu, Mengjian(zhumengjian11@nudt.edu.cn) ; Dai, Jiayu(jydai@nudt.edu.cn) |
| 2022-06-09 | |
| Source Publication | COMMUNICATIONS PHYSICS
 |
| ISSN | 2399-3650 |
| Volume | 5Issue:1Pages:7 |
| Abstract | Recently, intriguing physical properties have been unraveled in anisotropic layered semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry and thus a thickness-independent character emerges. Here, we apply high-resolution angle-resolved photoemission spectroscopy to directly image the in-plane anisotropic energy bands in monoclinic gallium telluride (GaTe). Our first-principles calculations reveal the in-plane anisotropic energy band structure of GaTe measured experimentally is dominated by a strong bulk-surface interaction rather than geometric factors, surface effect and quantum confinement effect. Furthermore, accompanied by the thickness of GaTe increasing from mono- to few-layers, the strong interlayer coupling of GaTe induces direct-indirect-direct band gap transition and the in-plane anisotropy of hole effective mass is reversed. Our results shed light on the physical origins of in-plane anisotropy of electronic structure in GaTe, providing guidance to further improving the performance of electronic and optoelectronic devices based on the layered anisotropic semiconductors. Conventionally, the in-plane electronic band structure anisotropy originates from the low crystallographic symmetry in the layered material. Here, using angle-resolved photoemission spectroscopy and density functional theory the authors report that the observed in-plane anisotropic energy band structure of layered gallium telluride is dominated by a strong bulk-surface interaction rather than geometric factors, surface effect and quantum confinement effect. |
| Funding Organization | Science Challenge Project ; National Natural Science Foundation of China (NSFC) ; NSAF ; National Key R&D Program of China |
| DOI | 10.1038/s42005-022-00923-1 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Science Challenge Project[TZ2016001] ; National Natural Science Foundation of China (NSFC)[11774429] ; National Natural Science Foundation of China (NSFC)[11804386] ; National Natural Science Foundation of China (NSFC)[12004429] ; National Natural Science Foundation of China (NSFC)[11974357] ; National Natural Science Foundation of China (NSFC)[U1932151] ; NSAF[U1830206] ; National Key R&D Program of China[2017YFA0403200] ; National Key R&D Program of China[2018YFA0306900] ; National Key R&D Program of China[2019YFA0307800] |
| WOS Research Area | Physics |
| WOS Subject | Physics, Multidisciplinary |
| WOS ID | WOS:000809201300001 |
| Publisher | NATURE PORTFOLIO |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/174315 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Han, Zheng; Zhu, Mengjian; Dai, Jiayu |
| Affiliation | 1.Natl Univ Def Technol, Dept Phys, Changsha 410073, Peoples R China 2.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 4.Univ Sci & Technol China, Sch Nanotech & Nanobion, Hefei 230026, Peoples R China 5.Hengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421002, Peoples R China 6.Shanxi Univ, Inst Optoelect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China 7.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China 8.Natl Univ Def Technol, Coll Adv Interdisciplinary Studies, Changsha 410073, Peoples R China |
| Recommended Citation GB/T 7714 | Lai, Kang,Ju, Sailong,Zhu, Hongen,et al. Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe[J]. COMMUNICATIONS PHYSICS,2022,5(1):7. |
| APA | Lai, Kang.,Ju, Sailong.,Zhu, Hongen.,Wang, Hanwen.,Wu, Hongjian.,...&Dai, Jiayu.(2022).Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe.COMMUNICATIONS PHYSICS,5(1),7. |
| MLA | Lai, Kang,et al."Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe".COMMUNICATIONS PHYSICS 5.1(2022):7. |
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