Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe

doi:10.1038/s42005-022-00923-1

IMR OpenIR

	Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe
	Lai, Kang 1; Ju, Sailong 1; Zhu, Hongen 2; Wang, Hanwen 3; Wu, Hongjian 1; Yang, Bingjie 4; Zhang, Enrui 1; Yang, Ming 1; Li, Fangsen 4; Cui, Shengtao 2; Deng, Xiaohui 5; Han, Zheng 6,7; Zhu, Mengjian 8; Dai, Jiayu 1
通讯作者	Han, Zheng(vitto.han@gmail.com) ; Zhu, Mengjian(zhumengjian11@nudt.edu.cn) ; Dai, Jiayu(jydai@nudt.edu.cn)
	2022-06-09
发表期刊	COMMUNICATIONS PHYSICS
ISSN	2399-3650
卷号	5 期号:1 页码:7
摘要	Recently, intriguing physical properties have been unraveled in anisotropic layered semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry and thus a thickness-independent character emerges. Here, we apply high-resolution angle-resolved photoemission spectroscopy to directly image the in-plane anisotropic energy bands in monoclinic gallium telluride (GaTe). Our first-principles calculations reveal the in-plane anisotropic energy band structure of GaTe measured experimentally is dominated by a strong bulk-surface interaction rather than geometric factors, surface effect and quantum confinement effect. Furthermore, accompanied by the thickness of GaTe increasing from mono- to few-layers, the strong interlayer coupling of GaTe induces direct-indirect-direct band gap transition and the in-plane anisotropy of hole effective mass is reversed. Our results shed light on the physical origins of in-plane anisotropy of electronic structure in GaTe, providing guidance to further improving the performance of electronic and optoelectronic devices based on the layered anisotropic semiconductors. Conventionally, the in-plane electronic band structure anisotropy originates from the low crystallographic symmetry in the layered material. Here, using angle-resolved photoemission spectroscopy and density functional theory the authors report that the observed in-plane anisotropic energy band structure of layered gallium telluride is dominated by a strong bulk-surface interaction rather than geometric factors, surface effect and quantum confinement effect.
资助者	Science Challenge Project ; National Natural Science Foundation of China (NSFC) ; NSAF ; National Key R&D Program of China
DOI	10.1038/s42005-022-00923-1
收录类别	SCI
语种	英语
资助项目	Science Challenge Project[TZ2016001] ; National Natural Science Foundation of China (NSFC)[11774429] ; National Natural Science Foundation of China (NSFC)[11804386] ; National Natural Science Foundation of China (NSFC)[12004429] ; National Natural Science Foundation of China (NSFC)[11974357] ; National Natural Science Foundation of China (NSFC)[U1932151] ; NSAF[U1830206] ; National Key R&D Program of China[2017YFA0403200] ; National Key R&D Program of China[2018YFA0306900] ; National Key R&D Program of China[2019YFA0307800]
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
WOS记录号	WOS:000809201300001
出版者	NATURE PORTFOLIO
引用统计	被引频次：10[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/174315
专题	中国科学院金属研究所
通讯作者	Han, Zheng; Zhu, Mengjian; Dai, Jiayu
作者单位	1.Natl Univ Def Technol, Dept Phys, Changsha 410073, Peoples R China 2.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 4.Univ Sci & Technol China, Sch Nanotech & Nanobion, Hefei 230026, Peoples R China 5.Hengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421002, Peoples R China 6.Shanxi Univ, Inst Optoelect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China 7.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China 8.Natl Univ Def Technol, Coll Adv Interdisciplinary Studies, Changsha 410073, Peoples R China
推荐引用方式 GB/T 7714	Lai, Kang,Ju, Sailong,Zhu, Hongen,et al. Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe[J]. COMMUNICATIONS PHYSICS,2022,5(1):7.
APA	Lai, Kang.,Ju, Sailong.,Zhu, Hongen.,Wang, Hanwen.,Wu, Hongjian.,...&Dai, Jiayu.(2022).Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe.COMMUNICATIONS PHYSICS,5(1),7.
MLA	Lai, Kang,et al."Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe".COMMUNICATIONS PHYSICS 5.1(2022):7.