A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction

doi:10.1016/j.jmst.2022.04.021

IMR OpenIR

	A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction
	Wang, Yaning 1,2; Li, Wanying 1,2; Guo, Yimeng 1,2; Huang, Xin 3; Luo, Zhaoping 1,2; Wu, Shuhao 4; Wang, Hai 4; Chen, Jiezhi 4; Li, Xiuyan 1,2; Zhan, Xuepeng 4; Wang, Hanwen 1,2
通讯作者	Li, Xiuyan(xyli@imr.ac.cn) ; Zhan, Xuepeng(zhanxuepeng@sdu.edu.cn) ; Wang, Hanwen(hwwang15s@imr.ac.cn)
	2022-11-20
发表期刊	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN	1005-0302
卷号	128 页码:239-244
摘要	Memtransistor, a multi-terminal device that combines both the characteristics of a memristor and a transistor, has been intensively studied in two-dimensional layered materials (2DLM), which show potential for applications in such as neuromorphic computation. However, while often based on the migration of ions or atomic defects in the conduction channels, performances of memtransistors suffer from the poor reliability and tunability. Furthermore, those known 2DLM-based memtransistors are mostly constructed in a lateral manner, which hinders the further increasing of the transistor densities per area. Until now, fabricating non-atomic-diffusion based memtransistors with vertical structure remains challenging. Here, we demonstrate a vertically-integrated ferroelectric memristor by hetero-integrating the 2D ferroelectric materials CuInP2S6 (CIPS) into a graphite/CuInP2S6/MoS2 vertical heterostructure. Memristive behaviour and multi-level resistance states were realized. Essential synaptic behaviours including excitatory postsynaptic current, paired-pulse-facilitation, and spike-amplitude-dependent plasticity are successfully mimicked. Moreover, by applying a gate potential, the memristive behaviour and synaptic features can be effectively gate tuned. Our findings pave the way for the realization of novel gate-tunable ferroelectric synaptic devices with the capability to perform complex neural functions. (C) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
关键词	van der Waals heterostructures Ferroelectrics Memristor Artificial synapse Neuromorphic computing
资助者	National Natural Science Foundation of China (NSFC) ; China Postdoctoral Science Foundation ; Young Scholars Program of Shandong University
DOI	10.1016/j.jmst.2022.04.021
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China (NSFC)[12104462] ; National Natural Science Foundation of China (NSFC)[62104134] ; China Postdoctoral Science Foundation[2021M700154] ; Young Scholars Program of Shandong University
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000810873900004
出版者	JOURNAL MATER SCI TECHNOL
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/174441
专题	中国科学院金属研究所
通讯作者	Li, Xiuyan; Zhan, Xuepeng; Wang, Hanwen
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Aalto Univ, Dept Appl Phys, Aalto, Finland 4.Shandong Univ, Sch Informat Sci & Engn ISE, Qingdao 266237, Peoples R China
推荐引用方式 GB/T 7714	Wang, Yaning,Li, Wanying,Guo, Yimeng,et al. A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2022,128:239-244.
APA	Wang, Yaning.,Li, Wanying.,Guo, Yimeng.,Huang, Xin.,Luo, Zhaoping.,...&Wang, Hanwen.(2022).A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,128,239-244.
MLA	Wang, Yaning,et al."A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 128(2022):239-244.