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A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction
Wang, Yaning1,2; Li, Wanying1,2; Guo, Yimeng1,2; Huang, Xin3; Luo, Zhaoping1,2; Wu, Shuhao4; Wang, Hai4; Chen, Jiezhi4; Li, Xiuyan1,2; Zhan, Xuepeng4; Wang, Hanwen1,2
Corresponding AuthorLi, Xiuyan(xyli@imr.ac.cn) ; Zhan, Xuepeng(zhanxuepeng@sdu.edu.cn) ; Wang, Hanwen(hwwang15s@imr.ac.cn)
2022-11-20
Source PublicationJOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN1005-0302
Volume128Pages:239-244
AbstractMemtransistor, a multi-terminal device that combines both the characteristics of a memristor and a transistor, has been intensively studied in two-dimensional layered materials (2DLM), which show potential for applications in such as neuromorphic computation. However, while often based on the migration of ions or atomic defects in the conduction channels, performances of memtransistors suffer from the poor reliability and tunability. Furthermore, those known 2DLM-based memtransistors are mostly constructed in a lateral manner, which hinders the further increasing of the transistor densities per area. Until now, fabricating non-atomic-diffusion based memtransistors with vertical structure remains challenging. Here, we demonstrate a vertically-integrated ferroelectric memristor by hetero-integrating the 2D ferroelectric materials CuInP2S6 (CIPS) into a graphite/CuInP2S6/MoS2 vertical heterostructure. Memristive behaviour and multi-level resistance states were realized. Essential synaptic behaviours including excitatory postsynaptic current, paired-pulse-facilitation, and spike-amplitude-dependent plasticity are successfully mimicked. Moreover, by applying a gate potential, the memristive behaviour and synaptic features can be effectively gate tuned. Our findings pave the way for the realization of novel gate-tunable ferroelectric synaptic devices with the capability to perform complex neural functions. (C) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
Keywordvan der Waals heterostructures Ferroelectrics Memristor Artificial synapse Neuromorphic computing
Funding OrganizationNational Natural Science Foundation of China (NSFC) ; China Postdoctoral Science Foundation ; Young Scholars Program of Shandong University
DOI10.1016/j.jmst.2022.04.021
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China (NSFC)[12104462] ; National Natural Science Foundation of China (NSFC)[62104134] ; China Postdoctoral Science Foundation[2021M700154] ; Young Scholars Program of Shandong University
WOS Research AreaMaterials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectMaterials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS IDWOS:000810873900004
PublisherJOURNAL MATER SCI TECHNOL
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/174441
Collection中国科学院金属研究所
Corresponding AuthorLi, Xiuyan; Zhan, Xuepeng; Wang, Hanwen
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
3.Aalto Univ, Dept Appl Phys, Aalto, Finland
4.Shandong Univ, Sch Informat Sci & Engn ISE, Qingdao 266237, Peoples R China
Recommended Citation
GB/T 7714
Wang, Yaning,Li, Wanying,Guo, Yimeng,et al. A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2022,128:239-244.
APA Wang, Yaning.,Li, Wanying.,Guo, Yimeng.,Huang, Xin.,Luo, Zhaoping.,...&Wang, Hanwen.(2022).A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,128,239-244.
MLA Wang, Yaning,et al."A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 128(2022):239-244.
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