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题名: n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer
作者: Liu, Tony Chi;  Kabuyanagi, Shoichi;  Nishimura, Tomonori;  Yajima, Takeaki;  Toriumi, Akira
发表日期: 2017-6-1
摘要: A bonding technique via passivating interlayer formation is proposed for bulkmaterial heterojunction fabrication. n(+)Si/pGe heterojunctions were fabricated by a ribbon bonding with interfaces passivated by an amorphous interlayer. With a highest process temperature as low as 150. degrees C, the bonded junctions exhibited rectifying characteristics with a turn-on voltage of 0.3 V as an ideal Si/Ge heterojunction and an ideality factor of 2.15. This technique shows a great potential for bulk material heterojunction formation, especially when ultimately abrupt junctions and low temperature processes are needed.
刊名: IEEE ELECTRON DEVICE LETTERS
Appears in Collections:中国科学院金属研究所_期刊论文

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Recommended Citation:
Liu, Tony Chi,Kabuyanagi, Shoichi,Nishimura, Tomonori,et al. N(+)si/pge Heterojunctions Fabricated By Low Temperature Ribbon Bonding With Passivating Interlayer[J]. Ieee Electron Device Letters,2017,38(6):716-719.

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