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n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer
Liu, Tony Chi; Kabuyanagi, Shoichi; Nishimura, Tomonori; Yajima, Takeaki; Toriumi, Akira; Liu, TC (reprint author), Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan.
2017-06-01
Source PublicationIEEE ELECTRON DEVICE LETTERS
ISSN0741-3106
Volume38Issue:6Pages:716-719
AbstractA bonding technique via passivating interlayer formation is proposed for bulkmaterial heterojunction fabrication. n(+)Si/pGe heterojunctions were fabricated by a ribbon bonding with interfaces passivated by an amorphous interlayer. With a highest process temperature as low as 150. degrees C, the bonded junctions exhibited rectifying characteristics with a turn-on voltage of 0.3 V as an ideal Si/Ge heterojunction and an ideality factor of 2.15. This technique shows a great potential for bulk material heterojunction formation, especially when ultimately abrupt junctions and low temperature processes are needed.; A bonding technique via passivating interlayer formation is proposed for bulkmaterial heterojunction fabrication. n(+)Si/pGe heterojunctions were fabricated by a ribbon bonding with interfaces passivated by an amorphous interlayer. With a highest process temperature as low as 150. degrees C, the bonded junctions exhibited rectifying characteristics with a turn-on voltage of 0.3 V as an ideal Si/Ge heterojunction and an ideality factor of 2.15. This technique shows a great potential for bulk material heterojunction formation, especially when ultimately abrupt junctions and low temperature processes are needed.
description.department[liu, tony chi] univ tokyo, dept mech engn, tokyo 1138656, japan ; [liu, tony chi] chinese acad sci, inst met res, shenyang 110016, peoples r china ; [kabuyanagi, shoichi ; nishimura, tomonori ; yajima, takeaki ; toriumi, akira] univ tokyo, dept mat engn, tokyo 1138656, japan
KeywordGermanium Heterojunctions Passivation Interlayer Bonding
Subject AreaEngineering, Electrical & Electronic
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/78113
Collection中国科学院金属研究所
Corresponding AuthorLiu, TC (reprint author), Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan.
Recommended Citation
GB/T 7714
Liu, Tony Chi,Kabuyanagi, Shoichi,Nishimura, Tomonori,et al. n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer[J]. IEEE ELECTRON DEVICE LETTERS,2017,38(6):716-719.
APA Liu, Tony Chi,Kabuyanagi, Shoichi,Nishimura, Tomonori,Yajima, Takeaki,Toriumi, Akira,&Liu, TC .(2017).n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer.IEEE ELECTRON DEVICE LETTERS,38(6),716-719.
MLA Liu, Tony Chi,et al."n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer".IEEE ELECTRON DEVICE LETTERS 38.6(2017):716-719.
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