IMR OpenIR
n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer
Liu, Tony Chi; Kabuyanagi, Shoichi; Nishimura, Tomonori; Yajima, Takeaki; Toriumi, Akira; Liu, TC (reprint author), Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan.
2017-06-01
发表期刊IEEE ELECTRON DEVICE LETTERS
ISSN0741-3106
卷号38期号:6页码:716-719
摘要A bonding technique via passivating interlayer formation is proposed for bulkmaterial heterojunction fabrication. n(+)Si/pGe heterojunctions were fabricated by a ribbon bonding with interfaces passivated by an amorphous interlayer. With a highest process temperature as low as 150. degrees C, the bonded junctions exhibited rectifying characteristics with a turn-on voltage of 0.3 V as an ideal Si/Ge heterojunction and an ideality factor of 2.15. This technique shows a great potential for bulk material heterojunction formation, especially when ultimately abrupt junctions and low temperature processes are needed.; A bonding technique via passivating interlayer formation is proposed for bulkmaterial heterojunction fabrication. n(+)Si/pGe heterojunctions were fabricated by a ribbon bonding with interfaces passivated by an amorphous interlayer. With a highest process temperature as low as 150. degrees C, the bonded junctions exhibited rectifying characteristics with a turn-on voltage of 0.3 V as an ideal Si/Ge heterojunction and an ideality factor of 2.15. This technique shows a great potential for bulk material heterojunction formation, especially when ultimately abrupt junctions and low temperature processes are needed.
部门归属[liu, tony chi] univ tokyo, dept mech engn, tokyo 1138656, japan ; [liu, tony chi] chinese acad sci, inst met res, shenyang 110016, peoples r china ; [kabuyanagi, shoichi ; nishimura, tomonori ; yajima, takeaki ; toriumi, akira] univ tokyo, dept mat engn, tokyo 1138656, japan
关键词Germanium Heterojunctions Passivation Interlayer Bonding
学科领域Engineering, Electrical & Electronic
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/78113
专题中国科学院金属研究所
通讯作者Liu, TC (reprint author), Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan.
推荐引用方式
GB/T 7714
Liu, Tony Chi,Kabuyanagi, Shoichi,Nishimura, Tomonori,et al. n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer[J]. IEEE ELECTRON DEVICE LETTERS,2017,38(6):716-719.
APA Liu, Tony Chi,Kabuyanagi, Shoichi,Nishimura, Tomonori,Yajima, Takeaki,Toriumi, Akira,&Liu, TC .(2017).n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer.IEEE ELECTRON DEVICE LETTERS,38(6),716-719.
MLA Liu, Tony Chi,et al."n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer".IEEE ELECTRON DEVICE LETTERS 38.6(2017):716-719.
条目包含的文件
条目无相关文件。
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Liu, Tony Chi]的文章
[Kabuyanagi, Shoichi]的文章
[Nishimura, Tomonori]的文章
百度学术
百度学术中相似的文章
[Liu, Tony Chi]的文章
[Kabuyanagi, Shoichi]的文章
[Nishimura, Tomonori]的文章
必应学术
必应学术中相似的文章
[Liu, Tony Chi]的文章
[Kabuyanagi, Shoichi]的文章
[Nishimura, Tomonori]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。