n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer

IMR OpenIR

	n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer
	Liu, Tony Chi; Kabuyanagi, Shoichi; Nishimura, Tomonori; Yajima, Takeaki; Toriumi, Akira; Liu, TC (reprint author), Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan.
	2017-06-01
发表期刊	IEEE ELECTRON DEVICE LETTERS
ISSN	0741-3106
卷号	38 期号:6 页码:716-719
摘要	A bonding technique via passivating interlayer formation is proposed for bulkmaterial heterojunction fabrication. n(+)Si/pGe heterojunctions were fabricated by a ribbon bonding with interfaces passivated by an amorphous interlayer. With a highest process temperature as low as 150. degrees C, the bonded junctions exhibited rectifying characteristics with a turn-on voltage of 0.3 V as an ideal Si/Ge heterojunction and an ideality factor of 2.15. This technique shows a great potential for bulk material heterojunction formation, especially when ultimately abrupt junctions and low temperature processes are needed.; A bonding technique via passivating interlayer formation is proposed for bulkmaterial heterojunction fabrication. n(+)Si/pGe heterojunctions were fabricated by a ribbon bonding with interfaces passivated by an amorphous interlayer. With a highest process temperature as low as 150. degrees C, the bonded junctions exhibited rectifying characteristics with a turn-on voltage of 0.3 V as an ideal Si/Ge heterojunction and an ideality factor of 2.15. This technique shows a great potential for bulk material heterojunction formation, especially when ultimately abrupt junctions and low temperature processes are needed.
部门归属	[liu, tony chi] univ tokyo, dept mech engn, tokyo 1138656, japan ; [liu, tony chi] chinese acad sci, inst met res, shenyang 110016, peoples r china ; [kabuyanagi, shoichi ; nishimura, tomonori ; yajima, takeaki ; toriumi, akira] univ tokyo, dept mat engn, tokyo 1138656, japan
关键词	Germanium Heterojunctions Passivation Interlayer Bonding
学科领域	Engineering, Electrical & Electronic
收录类别	SCI
语种	英语
WOS记录号	WOS:000402146300005
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/78113
专题	中国科学院金属研究所
通讯作者	Liu, TC (reprint author), Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan.
推荐引用方式 GB/T 7714	Liu, Tony Chi,Kabuyanagi, Shoichi,Nishimura, Tomonori,et al. n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer[J]. IEEE ELECTRON DEVICE LETTERS,2017,38(6):716-719.
APA	Liu, Tony Chi,Kabuyanagi, Shoichi,Nishimura, Tomonori,Yajima, Takeaki,Toriumi, Akira,&Liu, TC .(2017).n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer.IEEE ELECTRON DEVICE LETTERS,38(6),716-719.
MLA	Liu, Tony Chi,et al."n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer".IEEE ELECTRON DEVICE LETTERS 38.6(2017):716-719.