Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences

doi:10.1016/j.mssp.2004.10.002

IMR OpenIR

	Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences
	Zhao, YW; Dong, HW; Li, JM; Ling, LY
Corresponding Author	Zhao, YW(zhaoyw@red.semi.ac.cn)
	2005-08-01
Source Publication	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN	1369-8001
Volume	8 Issue:4 Pages:531-535
Abstract	Photo luminescence (PL) spectroscopy has been used to study InP annealed in phosphorus and iron phosphide ambiences. Noticeable PL emissions related with thermally induced defects have been detected in undoped InP annealed in iron phosphide ambience. Origins of the PL emissions have been discussed. (c) 2004 Elsevier Ltd. All rights reserved.
Keyword	indium phosphide annealing photoluminescence
DOI	10.1016/j.mssp.2004.10.002
Indexed By	SCI
Language	英语
WOS Research Area	Engineering ; Materials Science ; Physics
WOS Subject	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS ID	WOS:000229421000013
Publisher	ELSEVIER SCI LTD
Citation statistics	Cited Times:2[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://ir.imr.ac.cn/handle/321006/83047
Collection	中国科学院金属研究所
Corresponding Author	Zhao, YW
Affiliation	Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation GB/T 7714	Zhao, YW,Dong, HW,Li, JM,et al. Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2005,8(4):531-535.
APA	Zhao, YW,Dong, HW,Li, JM,&Ling, LY.(2005).Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,8(4),531-535.
MLA	Zhao, YW,et al."Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 8.4(2005):531-535.

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