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n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 期号: 6, 页码: 716-719
作者:  Liu, Tony Chi;  Kabuyanagi, Shoichi;  Nishimura, Tomonori;  Yajima, Takeaki;  Toriumi, Akira;  Liu, TC (reprint author), Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan.
收藏  |  浏览/下载：109/0  |  提交时间：2017/08/17
Germanium  Heterojunctions  Passivation  Interlayer  Bonding  
High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO2 and Al2O3/SiO2 Films 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724
作者:  Zhang, Feng;  Sun, Guosheng;  Huang, Huolin;  Wu, Zhengyun;  Wang, Lei;  Zhao, Wanshun;  Liu, Xingfang;  Yan, Guoguo;  Zheng, Liu;  Dong, Lin;  Zeng, Yiping
收藏  |  浏览/下载：99/0  |  提交时间：2021/02/02
Metal-insulator-semiconductor (MIS) devices  photodetectors  ultraviolet (UV) detectors  
High-performance dual-gate carbon nanotube FETs with 40-nm gate length 期刊论文
Ieee Electron Device Letters, 2005, 卷号: 26, 期号: 11, 页码: 823-825
作者:  Y. M. Lin;  J. Appenzeller;  Z. H. Chen;  Z. G. Chen;  H. M. Cheng;  P. Avouris
收藏  |  浏览/下载：60/0  |  提交时间：2012/04/14
Carbon Nanotube (Cn)  Dual Gate  Field-effect Transistor (Fet)  Short-channel Effect  Field-effect Transistors