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Controlled growth of two-dimensional InAs single crystals via van der Waals epitaxy 期刊论文
NANO RESEARCH, 2022, 页码: 6
作者:  Dai, Jiuxiang;  Yang, Teng;  Jin, Zhitong;  Zhong, Yunlei;  Hu, Xianyu;  Zou, Jingyi;  Xu, Weigao;  Li, Tao;  Lin, Yuxuan;  Zhang, Xu;  Zhou, Lin
收藏  |  浏览/下载:117/0  |  提交时间:2022/07/14
two-dimensional materials  van der Waals epitaxy  indium arsenide  nonlayered material  
Ground-state phase in the three-dimensional topological Dirac semimetal Na3Bi 期刊论文
Physical Review B, 2014, 卷号: 89, 期号: 24
作者:  X. Y. Cheng;  R. H. Li;  Y. Sun;  X. Q. Chen;  D. Z. Li;  Y. Y. Li
收藏  |  浏览/下载:122/0  |  提交时间:2015/01/14
High-pressure Synthesis  Crystal-structure  Structure Refinement  Wannier Functions  Transition  Bismuthide  Arsenide  Space  Hall  
Structures and phase transition of GaAs under pressure 期刊论文
Chinese Physics Letters, 2008, 卷号: 25, 期号: 6, 页码: 2169-2172
作者:  C. Hong-Ling;  C. Xiang-Rong;  J. Guang-Fu;  W. Dong-Qing
Adobe PDF(162Kb)  |  收藏  |  浏览/下载:78/0  |  提交时间:2012/04/13
Iii-v  Electronic-structure  Gallium-arsenide  Semiconductors  Stability  Alas  Iv  Si  
Energetics of the growth mode transition in InAs/GaAs(001) small quantum dot formation: A first-principles study 期刊论文
Surface Science, 2006, 卷号: 600, 期号: 10, 页码: 2007-2010
作者:  E. Z. Liu;  C. Y. Wang
收藏  |  浏览/下载:111/0  |  提交时间:2012/04/13
Density-functional Calculations  Gallium Arsenide  Indium Arsenide  Growth Mode Transition  Surface Thermodynamics  Augmented-wave Method  Ab-initio  Ge  
First-principles calculations for transition phase and thermodynamic properties of GaAs 期刊论文
Chinese Physics, 2006, 卷号: 15, 期号: 4, 页码: 802-806
作者:  L. Y. Lu;  X. R. Chen;  B. R. Yu;  Q. Q. Gou
收藏  |  浏览/下载:78/0  |  提交时间:2012/04/13
Transition Phase  Thermodynamic Properties  Gaas  High-pressure  Iii-v  Structural-properties  Electronic-structure  Molecular-dynamics  Gallium-arsenide  Semiconductors  Simulation  Stability  Alas  
Indentation induced amorphization in gallium arsenide 期刊论文
Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing, 2002, 卷号: 337, 期号: 1-2, 页码: 21-24
作者:  Z. C. Li;  L. Liu;  X. Wu;  L. L. He;  Y. B. Xu
收藏  |  浏览/下载:97/0  |  提交时间:2012/04/14
Indentation  Amorphization  Gallium Arsenide  Phase-transition  High-pressure  Silicon  Hardness  Microindentation  Crystals