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Ohmic contacts and photoconductivity of individual ZnTe nanowires 期刊论文
Applied Physics Letters, 2009, 卷号: 94, 期号: 4
作者:  Q. F. Meng;  C. B. Jiang;  S. X. Mao
Adobe PDF(511Kb)  |  收藏  |  浏览/下载:110/0  |  提交时间:2012/04/13
Electrical Resistivity  Electrochemical Electrodes  Electron Traps  Electron-hole Recombination  Gold  Hole Traps  Ii-vi Semiconductors  Multilayers  Nanowires  Nickel  Ohmic Contacts  Photoconductivity  Semiconductor Quantum Wires  Wide Band Gap Semiconductors  Zinc  Compounds  Molecular-beam Epitaxy  Semiconductor Nanowires  Electrical-properties  Zno Nanowires  Growth  Photodetectors  Nanoribbon  Transport  Layers  
Effect of different types of carbon on microstructure and arcing behavior of Ag/C contact materials 期刊论文
Ieee Transactions on Components and Packaging Technologies, 2006, 卷号: 29, 期号: 2, 页码: 420-423
作者:  P. Jiang;  F. Li;  Y. P. Wang
收藏  |  浏览/下载:69/0  |  提交时间:2012/04/13
Electrical Contacts  Raman Spectra  Silver-carbon (Ag/c) Black  Silver-carbon (Ag/c) Nanotubes  Silver-diamond (Ag/diamond)  Silver-graphite (Ag/graphite)  Nanotubes  Raman  
EXPERIMENTAL-STUDY ON THE ER/P-INP SCHOTTKY-BARRIER 期刊论文
Journal of Applied Physics, 1995, 卷号: 78, 期号: 1, 页码: 584-586
作者:  W. X. Chen;  M. H. Yuan;  K. Wu;  Y. X. Zhang;  Z. M. Wang;  G. G. Qin
收藏  |  浏览/下载:64/0  |  提交时间:2012/04/14
Electrical-properties  Indium-phosphide  Contacts  Gaas  Si  
EFFECT OF REVERSE-BIAS ANNEALING AND ZERO-BIAS ANNEALING ON A HYDROGEN-CONTAINING AU/(N-TYPE GAAS) SCHOTTKY-BARRIER 期刊论文
Physical Review B, 1993, 卷号: 48, 期号: 24, 页码: 17986-17994
作者:  M. H. Yuan;  H. Z. Song;  S. X. Jin;  H. P. Wang;  Y. P. Qiao;  G. G. Qin
收藏  |  浏览/下载:100/0  |  提交时间:2012/04/14
Metal-semiconductor Interfaces  Electrical-properties  110 Surfaces  N-type  States  Diodes  Contacts  Height  Model  Heterojunctions