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Three-dimensional transistors and integration based on low-dimensional materials for the post-Moore's law era 期刊论文
MATERIALS TODAY, 2023, 卷号: 63, 页码: 170-187
作者:  Wang, Xiaoyue;  Liu, Chi;  Wei, Yuning;  Feng, Shun;  Sun, Dongming;  Cheng, Huiming
收藏  |  浏览/下载：8/0  |  提交时间：2024/01/07
Field-effect transistors  Three-dimensional integration  Low-dimensional materials  Carbon nanotubes  post-Moore's law era  
High-Purity Monochiral Carbon Nanotubes with a 1.2 nm Diameter for High-Performance Field-Effect Transistors 期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2021, 页码: 8
作者:  Li, Yahui;  Zheng, Miaomiao;  Yao, Jian;  Gong, Wenbin;  Li, Yijun;  Tang, Jianshi;  Feng, Shun;  Han, Ruyue;  Sui, Qicheng;  Qiu, Song;  Kang, Lixing;  Jin, Hehua;  Sun, Dongming;  Li, Qingwen
收藏  |  浏览/下载：165/0  |  提交时间：2021/11/22
field-effect transistors  carbon nanotubes  conjugated polymers  monochiral  
Metal–insulator transition in few-layered GaTe transistors 期刊论文
半导体学报:英文版, 2020, 卷号: 41.0, 期号: 007, 页码: 28-32
作者:  Xiuxin Xia;  Xiaoxi Li;  Hanwen Wang
收藏  |  浏览/下载：159/0  |  提交时间：2021/02/02
metal-insulator  transition  gate  tunable  GaTe  field  effect  transistors  
Metal–insulator transition in few-layered GaTe transistors 期刊论文
半导体学报:英文版, 2020, 卷号: 41.0, 期号: 007, 页码: 28-32
作者:  Xiuxin Xia;  Xiaoxi Li;  Hanwen Wang
收藏  |  浏览/下载：164/0  |  提交时间：2021/02/02
metal-insulator  transition  gate  tunable  GaTe  field  effect  transistors  
Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 45, 页码: 42358-42364
作者:  Yan, Shili;  Huang, Hai;  Xie, Zhijian;  Ye, Guojun;  Li, Xiao-Xi;  Taniguchi, Takashi;  Watanabe, Kenji;  Han, Zheng;  Chen, Xianhui;  Wang, Jianlu;  Chen, Jian-Hao
收藏  |  浏览/下载：138/0  |  提交时间：2021/02/02
black phosphorus  P(VDF-TrFE)  nonvolatile ferroelectric memories  field-effect transistors (FETs)  anti-hysteresis  
Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties 期刊论文
SMALL, 2019, 页码: 9
作者:  Cai, Zhengyang;  Shen, Tianze;  Zhu, Qi;  Feng, Simin;  Yu, Qiangmin;  Liu, Jiaman;  Tang, Lei;  Zhao, Yue;  Wang, Jiangwei;  Liu, Bilu;  Cheng, Hui-Ming
收藏  |  浏览/下载：135/0  |  提交时间：2021/02/02
doping  dual-additive chemical vapor deposition  electronic properties  field effect transistors  hydrogen evolution reaction  MoS2  
Growth of metal-catalyst-free nitrogen-doped metallic single-wall carbon nanotubes 期刊论文
Nanoscale, 2014, 卷号: 6, 期号: 20, 页码: 12065-12070
作者:  J. C. Li;  P. X. Hou;  L. L. Zhang;  C. Liu;  H. M. Cheng
收藏  |  浏览/下载：99/0  |  提交时间：2015/01/14
Field-effect Transistors  Ascorbic-acid  Modified Electrode  Oxygen  Reduction  Preferential Growth  Swcnt Synthesis  High-quality  Uric-acid  Dopamine  Biosensors  
Stacking stability of MoS2 bilayer: An an initio study 期刊论文
Chinese Physics B, 2014, 卷号: 23, 期号: 10
作者:  P. Tao;  H. H. Guo;  T. Yang;  Z. D. Zhang
收藏  |  浏览/下载：164/0  |  提交时间：2015/01/14
Mos2  Stacking Order  Climbing-image Nudge-elastic Band  Isobaric  Sliding  Field-effect Transistors  Metal Dichalcogenides  Electronic-structure  Band-gap  Monolayer  
A Review of Carbon Nanotube- and Graphene-Based Flexible Thin-Film Transistors 期刊论文
Small, 2013, 卷号: 9, 期号: 8, 页码: 1188-1205
作者:  D. M. Sun;  C. Liu;  W. C. Ren;  H. M. Cheng
收藏  |  浏览/下载：150/0  |  提交时间：2013/12/24
Carbon Nanotubes  Graphene  Flexible Devices  Thin-film Transistors  Field-effect Transistors  Chemical-vapor-deposition  Atomic Layer  Deposition  Hexagonal Boron-nitride  High-performance  Gate Dielectrics  Large-scale  Band-gap  Bilayer Graphene  Large-area  
Template-free electrosynthesis of crystalline germanium nanowires from solid germanium oxide in molten CaCl2-NaCl 期刊论文
Electrochimica Acta, 2013, 卷号: 102, 页码: 369-374
作者:  H. Y. Yin;  W. Xiao;  X. H. Mao;  W. F. Wei;  H. Zhu;  D. H. Wang
收藏  |  浏览/下载：118/0  |  提交时间：2013/12/24
Electrosynthesis  Ge Nanowires  Molten Salt Electrochemistry  Solid-state Electrochemistry  Direct Electrolytic Reduction  Field-effect Transistors  Electrochemical  Reduction  3-phase Interlines  Calcium-chloride  Silicon Nanowires  Tungsten Powder  Sio2 Pellets  Growth  Dioxide