Chinese | English

Search in the results

IMR OpenIR

Browse/Search Results:  1-10 of 272 Help

Selected(0)Clear Items/Page:    Sort:
Laminated three-dimensional carbon nanotube integrated circuits 期刊论文
NANOSCALE, 2022, 页码: 6
Authors:  Jian, Yang;  Sun, Yun;  Feng, Shun;  Zang, Chao;  Li, Bo;  Qiu, Song;  Li, Qing-Wen;  Yan, Xin;  Sun, Dong-Ming
Favorite  |  View/Download：48/0  |  Submit date：2022/07/01
High-Purity Monochiral Carbon Nanotubes with a 1.2 nm Diameter for High-Performance Field-Effect Transistors 期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2021, 页码: 8
Authors:  Li, Yahui;  Zheng, Miaomiao;  Yao, Jian;  Gong, Wenbin;  Li, Yijun;  Tang, Jianshi;  Feng, Shun;  Han, Ruyue;  Sui, Qicheng;  Qiu, Song;  Kang, Lixing;  Jin, Hehua;  Sun, Dongming;  Li, Qingwen
Favorite  |  View/Download：94/0  |  Submit date：2021/11/22
field-effect transistors  carbon nanotubes  conjugated polymers  monochiral  
Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors 期刊论文
CRYSTALS, 2020, 卷号: 10, 期号: 3, 页码: 9
Authors:  Xia, Xiuxin;  Sun, Xingdan;  Wang, Hanwen;  Li, Xiaoxi
Favorite  |  View/Download：68/0  |  Submit date：2021/02/02
contact  alloying  GaTe  Pd electrode  
Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors 期刊论文
CRYSTALS, 2020, 卷号: 10, 期号: 3, 页码: 9
Authors:  Xia, Xiuxin;  Sun, Xingdan;  Wang, Hanwen;  Li, Xiaoxi
Favorite  |  View/Download：83/0  |  Submit date：2021/02/02
contact  alloying  GaTe  Pd electrode  
Metal–insulator transition in few-layered GaTe transistors 期刊论文
半导体学报:英文版, 2020, 卷号: 41.0, 期号: 007, 页码: 28-32
Authors:  Xiuxin Xia;  Xiaoxi Li;  Hanwen Wang
Favorite  |  View/Download：79/0  |  Submit date：2021/02/02
metal-insulator  transition  gate  tunable  GaTe  field  effect  transistors  
Metal–insulator transition in few-layered GaTe transistors 期刊论文
半导体学报:英文版, 2020, 卷号: 41.0, 期号: 007, 页码: 28-32
Authors:  Xiuxin Xia;  Xiaoxi Li;  Hanwen Wang
Favorite  |  View/Download：79/0  |  Submit date：2021/02/02
metal-insulator  transition  gate  tunable  GaTe  field  effect  transistors  
A FinFET with one atomic layer channel 期刊论文
naturecommunications, 2020, 卷号: 11, 期号: 1, 页码: 1-7
Authors:  Mao-Lin Chen;  Xingdan Sun;  Hang Liu;  Hanwen Wang;  Qianbing Zhu;  Shasha Wang;  Haifeng Du;  Baojuan Dong;  Jing Zhang;  Yun Sun;  Song Qiu;  Thomas Alava;  Song Liu;  Dong-Ming Sun;  Zheng Han
Favorite  |  View/Download：119/0  |  Submit date：2021/02/02
Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 45, 页码: 42358-42364
Authors:  Yan, Shili;  Huang, Hai;  Xie, Zhijian;  Ye, Guojun;  Li, Xiao-Xi;  Taniguchi, Takashi;  Watanabe, Kenji;  Han, Zheng;  Chen, Xianhui;  Wang, Jianlu;  Chen, Jian-Hao
Favorite  |  View/Download：76/0  |  Submit date：2021/02/02
black phosphorus  P(VDF-TrFE)  nonvolatile ferroelectric memories  field-effect transistors (FETs)  anti-hysteresis  
Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties 期刊论文
SMALL, 2019, 页码: 9
Authors:  Cai, Zhengyang;  Shen, Tianze;  Zhu, Qi;  Feng, Simin;  Yu, Qiangmin;  Liu, Jiaman;  Tang, Lei;  Zhao, Yue;  Wang, Jiangwei;  Liu, Bilu;  Cheng, Hui-Ming
Favorite  |  View/Download：75/0  |  Submit date：2021/02/02
doping  dual-additive chemical vapor deposition  electronic properties  field effect transistors  hydrogen evolution reaction  MoS2  
A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices 期刊论文
ACS NANO, 2019, 卷号: 13, 期号: 5, 页码: 5513-5522
Authors:  Zhang, Dingdong;  Du, Jinhong;  Hong, Yi-Lun;  Zhang, Weimin;  Wang, Xiao;  Jin, Hui;  Burn, Paul L.;  Yu, Junsheng;  Chen, Maolin;  Sun, Dong-Min;  Li, Meng;  Liu, Lianqing;  Ma, Lai-Peng;  Cheng, Hui-Ming;  Ren, Wencai
Favorite  |  View/Download：83/0  |  Submit date：2021/02/02
rosin  graphene  2D materials  clean transfer  optoelectronic devices