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VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 329, 期号: 1, 页码: 1-5
作者:  Zhao, Jie;  Zeng, Yiping;  Yang, Qiumin;  Li, Yiyang;  Cui, Lijie;  Liu, Chao
收藏  |  浏览/下载：105/0  |  提交时间：2021/02/02
Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy  Molecular beam epitaxy  Cadmium compounds  Semiconducting II-VI materials  
VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 329, 期号: 1, 页码: 1-5
作者:  Zhao, Jie;  Zeng, Yiping;  Yang, Qiumin;  Li, Yiyang;  Cui, Lijie;  Liu, Chao
收藏  |  浏览/下载：84/0  |  提交时间：2021/02/02
Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy  Molecular beam epitaxy  Cadmium compounds  Semiconducting II-VI materials  
Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495
作者:  Zhao, Jie;  Zeng, Yiping;  Liu, Chao;  Li, Yanbo
收藏  |  浏览/下载：80/0  |  提交时间：2021/02/02
Reflection high-energy electron diffraction  Atomic force microscopy  Molecular beam epitaxy  Zinc compounds  Semiconducting II-VI materials  
A comparative first-principles study of ZnS and ZnO in zinc blende structure 期刊论文
Journal of Crystal Growth, Journal of Crystal Growth, 2006, 2006, 卷号: 287, 287, 期号: 1, 页码: 185-188, 185-188
作者:  S. Q. Wang
收藏  |  浏览/下载：123/0  |  提交时间：2012/04/14
Zinc Compounds  Zinc Compounds  Zno  Zno  Optoelectronics  Optoelectronics  Semiconducting Ii-vi Materials  Semiconducting Ii-vi Materials  Functional Perturbation-theory  Functional Perturbation-theory  Thermal-expansion  Thermal-expansion  Semiconductors  Semiconductors  Constants  Constants  Pressure  Pressure